ZUMT817 datasheet, PDF - EEWORLD Datasheet

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ZUMT817: DescriptionSOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; File Size16KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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Not Recommended for New Design

Please Use ZUMT491

SOT323 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 – FEBRUARY 1999

PARTMARKING DETAILS

ZUMT817-25 -

ZUMT817-40 -

T7

T23

ZUMT817-25

ZUMT817-40

COMPLEMENTARY TYPES

ZUMT817-25 -

ZUMT817-40 -

ZUMT807-25

ZUMT807-40– T7

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Peak Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

I

BM

P

tot

T

j

:T

stg

VALUE

50

45

5

1

500

100

200

330

-55 to +150

UNIT

V

A

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Turn-on Voltage

Static Forward

Current Transfer Ratio

-25

-40

Transition

Frequency

Collector-base

Capacitance

f

T

C

obo

SYMBOL

I

CBO

I

EBO

V

CE(sat)

V

BE(on)

h

FE

100

40

160

250

200

5.0

MIN.

TYP.

MAX. UNIT CONDITIONS.

700

1.2

600

400

600

mV

V

pF

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle

10

0.1

5

A

V

CB

=20V, I

E

=0

V

CB

=20V, I

E

=0, T

amb

=150°C

V

EB

=5V, I

C

=0

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

I

C

=500mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

I

C

=100mA, V

CE

=1V*

MHz

I

C

=10mA, V

CE

=5V

f=35MHz

I

E

=I

e

=0, V

CB

=10V

f=1MHz

2%

ZUMT817 Related Products

	ZUMT817	ZUMT817-40	ZUMT817-25
Description	SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS	SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS	SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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