SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 1 - DECEMBER 1998
Partmarking Detail:
ZUMT860B
ZUMT860C
T2B
T22
ZUMT860B
ZUMT860C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
EM
I
BM
P
tot
T
j
:T
stg
VALUE
-50
-50
-45
-5
-100
-200
-200
330
-55 to +150
UNIT
V
V
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
-15
-4
-75
-250
-300
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
V
BE(sat)
V
BE
-580
-700
-850
-650
-750
-820
-250
-650
-600
UNIT
nA
µA
mV
mV
mV
mV
mV
CONDITIONS.
V
CB
= -30V
V
CB
= -30V, T
amb
=150°C
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA*
I
C
=-10mA ,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
I
C
=-2mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
Collector Cut-Off Current I
CBO
Collector-Emitter
Saturation Voltage
V
CE(sat)
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
ZUMT860B
ZUMT860C
TYPICAL CHARACTERISTICS
1.2
+25° C
1.2
IC/IB=10
0.8
IC/IB=10
IC/IB=20
IC/IB=50
0.8
-55°C
+25°C
+100°C
+150°C
0.4
0.4
0
1m
10m
100m
1
0
1m
10m
100m
1
I
C
- Collector Current (A)
V
CE(sat)
v I
C
IC - Collector Current (A)
V
CE(sat)
v IC
500
VCE=5V
1.0
IC/IB=10
+100°C
+25°C
-55°C
250
0.5
-55°C
+25°C
+100°C
+150°C
0
1m
10m
100m
1
0
1m
10m
100m
1
I
C
- Collector Current (A)
h
FE
v I
C
IC - Collector Current (A)
V
BE(sat)
v I
C
1
1.0
VCE=5V
100m
0.5
-55°C
+25°C
+100°C
10m
DC
1s
100ms
10ms
1ms
100µs
100us
0
1m
10m
100m
1
1m
100m
1
10
100
IC - Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
DSP and ARM Processors
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