ZUMT918 datasheet, PDF - EEWORLD Datasheet

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ZUMT918: DescriptionSOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR; File Size20KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR

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SOT323 NPN SILICON PLANAR

VHF/UHF TRANSISTOR

ISSUE 1 – DECEMBER 1998

PARTMARKING DETAIL –

T5

ZUMT918

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

VALUE

30

15

3

100

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

MIN.

30

15

3

0.05

0.4

1.0

20

600

3.0

1.7

1.6

6.0

15

MHz

pF

dB

TYP.

MAX.

UNIT

V

µA

V

CONDITIONS.

I

C

=1µA, I

E

=0

I

C

=3mA, I

B

=0*

I

E

=10µA, I

C

=0

V

CB

=15V, I

E

=0

I

C

=10mA, I

B

=1mA

I

C

=10mA, I

B

=1mA

I

C

=3mA, V

CE

=1V

I

C

=4mA, V

CE

=10V

f=100MHz

V

CB

=0V, f=1MHz

V

CB

=10V, f=1MHz

V

EB

=0.5V,f=1MHz

V

CE

=6V, I

C

=1mA

f=60MHz, R

G

=400Ω

V

CB

=12V, I

C

=6mA

f=200MHz

Collector Cut-Off Current I

CBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

Input Capacitance

Noise Figure

Common Emitter

Power Gain

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

C

ibo

N

G

pe

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle

≤2%

Spice parameter data is available upon request for this device

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