PD- 95306
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
IRF7450PbF
HEXFET
®
Power MOSFET
R
DS(on)
max
0.17
W
@V
GS
= 10V
I
D
2.5A
V
DSS
200V
Lead-Free
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
2.5
2.0
20
2.5
0.02
± 30
11
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
10/12/04
IRF7450PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.17
Ω
V
GS
= 10V, I
D
= 1.5A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
26
6.0
12
10
3.0
17
18
940
160
33
1100
66
25
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 1.5A
39
I
D
= 1.5A
9.0
nC
V
DS
= 160V
18
V
GS
= 10V,
–––
V
DD
= 100V
–––
I
D
= 1.5A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
230
2.5
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
97
350
2.3
A
20
1.3
146
525
V
ns
nC
2
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.5A
di/dt = 100A/µs
D
S
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IRF7450PbF
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
1
1
5.0V
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 2.5A
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
10
2.0
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
5.0
V DS = 50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
7.5
8.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7450PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
20
I
D
=
1.5A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
16
12
100
8
4
10
1
10
100
1000
0
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
10
10
100µsec
T
J
= 150
°
C
1
T
J
= 25
°
C
1
T A = 25°C
T J = 150°C
0.1
Single Pulse
1
10
100
1msec
10msec
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
V
SD
,Source-to-Drain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7450PbF
2.5
V
DS
2.0
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
1.5
-
V
DD
10V
1.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
0.5
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
0.0
T
C
, Case Temperature ( °C)
75
100
125
150
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
Thermal Response (Z
thJA
)
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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