ZX5T955Z.
140V PNP Low saturation medium power transistor
in SOT89
Summary
BV
CEO
= -140V : R
SAT
= 85m ; I
C
= -3A
Description
Packaged in the SOT89 outline this new 5th generation low saturation 140V
PNP transistor offers low on state losses making it ideal for use in DC-DC
circuits, line switching and various driving and power management functions.
Features
•
•
•
3 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
C
Applications
•
•
•
•
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
B
E
Ordering Information
Device
ZX5T955TA
Reel
Size
7”
Tape
Width
12mm
Quantity
Per Reel
1000
Device Marking
955
C
E
C
B
Pinout - top view
Issue 2 - June 2008
© Zetex Semiconductors Ltd 2008
1
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ZX5T955Z.
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Operating and storage temperature range
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
T
j
, T
stg
Limit
-180
-140
-7
-3
-10
1.5
12
2.1
16.8
-55 to 150
Unit
V
V
V
A
A
W
mW/
o
C
W
mW°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Symbol
R
JA
R
JA
Limit
83
60
Unit
°C/W
°C/W
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 2 - June 2008
© Zetex Semiconductors Ltd 2008
2
www.zetex.com
ZX5T955Z.
Characteristics
Issue 2 - June 2008
© Zetex Semiconductors Ltd 2008
3
www.zetex.com
ZX5T955Z.
Electrical Characteristics
(at T
amb
=25
o
C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Symbol
BV
CBO
Min.
-180
-180
-140
-7.0
Typ.
-200
-200
-160
-8.0
<1
-20
-0.5
-20
-0.5
-10
-60
-75
-115
-330
-1010
-900
Max.
Unit Conditions
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
I
C
= -100 A
I
C
= -100 A, RB<1k
I
C
= -10mA
(*)
I
E
= -100 A
V
CB
= -150V
V
CB
= -150V, Tamb =100
o
C
V
CB
= -150V
V
CB
= -150V, Tamb =100
o
C
V
EB
= -6V
I
C
= -0.1A, I
B
= -5mA
(*)
I
C
= -0.5A, I
B
= -50mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -3A, I
B
= -300mA
(*)
I
C
= -3A, I
B
= -300mA
(*)
I
C
= -3A, V
CE
= -5V
(*)
I
C
= -10mA, V
CE
= -5V
(*)
300
I
C
= -1A, V
CE
= -5V
(*)
I
C
= -3A, V
CE
= -5V
(*)
I
C
= -10A, V
CE
= -5V
(*)
MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
pF
ns
ns
V
CB
= -10V, f = 1MHz
(*)
I
C
= -1A, V
CC
= -50V,
I
B1
= -I
B2
= -100mA
Collector-Emitter breakdown BV
CER
voltage
Collector-Emitter breakdown BV
CEO
voltage
Emitter-Base breakdown
voltage
Collector cut-off current
BV
EBO
I
CBO
I
CER
R<1k
I
EBO
V
CE(sat)
Collector cut-off current
<1
Emitter cut-off current
Collector-Emitter saturation
voltage
<1
-37
-50
-80
-255
Base-emitter saturation
voltage
V
BE(sat)
-910
-800
100
100
45
225
200
100
5
Base-emitter turn-on voltage V
BE(on)
Static forward current
transfer ratio
h
FE
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
on
t
off
120
33
42
636
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Issue 2 - June 2008
© Zetex Semiconductors Ltd 2008
4
www.zetex.com
ZX5T955Z.
Typical characteristics
Issue 2 - June 2008
© Zetex Semiconductors Ltd 2008
5
www.zetex.com
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