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BC860

Description
RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size78KB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

BC860 Overview

RF SMALL SIGNAL TRANSISTOR

BC860 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF small signal
BC859,BC860
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
Features
Low current (max. 100 mA).
Low voltage (max. 45 V).
+0.1
1.3
-0.1
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation *
Junction temperature
Storage temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
R
amb
R
th j-a
BC859
-30
-30
-5
-100
-200
-200
250
150
-65 to +150
-65 to +150
500
K/W
BC860
-50
-45
Unit
V
V
V
mA
mA
mA
mW
http://www.luguang.cn
mail:lge@luguang.cn
+0.1
0.38
-0.1
0-0.1

BC860 Related Products

BC860 BC859 BC860C
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
state ACTIVE ACTIVE ACTIVE
Transistor type RF small signal RF small signal RF small signal

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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