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SMBJ18CAHE3

Description
Surface Mount TRANSZORB Transient Voltage Suppressors
File Size104KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

SMBJ18CAHE3 Overview

Surface Mount TRANSZORB Transient Voltage Suppressors

SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB J-Bend)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
(bi-directional)
V
BR
(uni-directional)
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 231 V
6.4 V to 231 V
5.0 V to 188 V
600 W
100 A
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 10-Dec-12
Document Number: 88392
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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