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BF423

Description
PNP high-voltage transistors
Categorysemiconductor    Discrete semiconductor   
File Size109KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BF423 Overview

PNP high-voltage transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE
VIDEO TRANSISTORS
BF421
BF423
TO-92
Plastic Package
High Voltage Video Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
423
250
250
5
500
800
6.4
2.75
22
-55 to +150
421
300
300
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
156
45
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
423
I
C
=1.0mA,I
B
=0
V
CEO
>250
Collector Emitter Voltage*
V
CBO
I
C
=100µA.I
E
=0
Collector Base Voltage
>250
V
EBO
I
E
=100µA, I
C
=0
EmitterBase Voltage
>5
V
CB
=200V,I
E
=0
I
CBO
<10
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
EB
=5.0V, I
C
=0
I
C
=25mA,V
CE
=20V
I
C
=20mA,I
B
=2mA
I
C
=20mA,I
B
=2mA
<100
>50
<0.5
<2
421
>300
>300
>5
<10
<100
>50
<0.5
<2
UNITS
V
V
V
nA
nA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4

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