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BFX30

Description
PNP switching transistor
Categorysemiconductor    Discrete semiconductor   
File Size105KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet View All

BFX30 Overview

PNP switching transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
BFX30
TO-39
Metal Can Package
INTENDED FOR SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Emitter Curent (Peak Value)
Total Device Dissipation @ Ta=25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
V
CBO
V
EBO
I
C
I
CM
I
EM
P
tot
T
j
, T
stg
VALUE
65
65
5.0
600
600
600
600
-65 to +200
UNITS
V
V
V
mA
mA
mA
mW
ºC
R
th(j-a)
300
K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
SYMBOL
I
CBO
TEST CONDITION
V
CB
=65V, I
E
=0
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0, Tj=100ºC
Emitter Cut off Current
DC Current Gain
I
EBO
h
FE
V
EB
=5V, I
C
=0
V
EB
=3V, I
C
=0
I
C
=1.0mA,V
CE
=0.4V
I
C
=10mA,V
CE
=0.4V
I
C
=50mA,V
CE
=0.4V
I
C
=150mA,V
CE
=0.4V
Base Emitter Saturation Voltage
V
BE(Sat)
I
C
=30mA,I
B
=1.0mA
I
C
=150mA,I
B
=15mA
40
50
20
10
0.9
1.3
V
V
200
VALUE
MIN
MAX
500
50
2.0
500
100
UNITS
nA
nA
µA
nA
nA
Continental Device India Limited
Data Sheet
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