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BFY51

Description
NPN medium power transistors
Categorysemiconductor    Discrete semiconductor   
File Size105KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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NPN medium power transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR TRANSISTORS
BFY50, BFY51, BFY52
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
BFY50 BFY51
35
30
80
60
6.0
1.0
0.8
4.6
5.0
28.6
-65 to +200
BFY52
20
40
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
89.5
16.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
I
C
=10mA,I
B
=0
V
CEO
Collector Emitter Voltage
V
CBO
I
C
=10µA,I
E
=0
Collector Base Voltage
V
EBO
I
C
=10µA,I
C
=0
Emitter Base Voltage
Collector Cut off Current
I
CBO
V
CB
=60V, I
E
=0
V
CB
=40V, I
E
=0
V
CB
=30V, I
E
=0
T
j
=100
o
C
V
CB
=60V, I
E
=0
V
CB
=40V, I
E
=0
V
CB
=30V, I
E
=0
BFY50 BFY51
>30
>35
>80
>6.0
<50
<50
>60
>6.0
BFY52
>20
>40
>6.0
UNITS
V
V
V
nA
nA
<50
nA
<2.5
<2.5
<2.5
µA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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