TrenchP
TM
Power MOSFET
IXTY26P10T
IXTA26P10T
IXTP26P10T
V
DSS
I
D25
R
DS(on)
=
=
- 100V
- 26A
90m
P-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
TO-263 (IXTA)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
Maximum Ratings
- 100
- 100
15
25
- 26
- 80
- 26
300
150
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
0.35
2.50
3.00
V
V
V
V
A
A
A
mJ
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
GD
S
D (Tab)
G
S
D (Tab)
TO-220 (IXTP)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250A
V
DS
= V
GS
, I
D
= - 250A
V
GS
=
15V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min. Typ. Max.
-100
- 2.5
- 4.5
50
V
V
nA
Easy to Mount
Space Savings
High Power Density
Applications
-10
A
- 250
A
90 m
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS100291B(8/17)
IXTY26P10T
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3 (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
10
17
3820
280
93
20
15
37
11
52
18
16
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.83
C/W
C/W
IXTA26P10T
IXTP26P10T
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, -di/dt = -100A/s
V
R
= - 50V, V
GS
= 0V
70
210
-6
Characteristic Values
Min.
Typ.
Max.
- 26
-104
-1.5
A
A
V
ns
nC
A
Note
1: Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTY26P10T
IXTA26P10T
IXTP26P10T
o
Fig. 1. Output Characteristics @ T
J
= 25 C
-28
-24
-20
V
GS
= -10V
- 9V
- 8V
-100
-90
-80
-70
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= -10V
- 9V
I
D
- Amperes
I
D
- Amperes
- 7V
-16
-12
-8
-4
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
- 6V
-60
-50
-40
-30
-20
- 8V
- 7V
- 6V
- 5V
0
-5
-10
-15
-20
-25
-30
- 5V
- 4V
-2.2
-2.4
-10
0
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
-28
-24
-20
-16
-12
-8
-4
- 4V
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
- 5V
V
GS
= -10V
- 9V
- 8V
o
2.0
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= -13A Value vs.
Junction Temperature
V
GS
= -10V
R
DS(on)
- Normalized
I
D
- Amperes
- 7V
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
I
D
= - 26A
I
D
= -13A
- 6V
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
2.6
2.4
2.2
Fig. 5. R
DS(on)
Normalized to I
D
= -13A Value vs.
Drain Current
V
GS
= -10V
Fig. 6. Maximum Drain Current vs. Case Temperature
-30
-25
R
DS(on)
- Normalized
T
J
= 125 C
o
1.8
1.6
1.4
1.2
I
D
- Amperes
T
J
= 25 C
o
2.0
-20
-15
-10
-5
1.0
0.8
0
-10
-20
-30
-40
-50
-60
-70
-80
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY26P10T
IXTA26P10T
IXTP26P10T
-40
-35
-30
Fig. 7. Input Admittance
Fig. 8. Transconductance
30
T
J
= - 40 C
25
o
T
J
= 125 C
o
I
D
- Amperes
g
f s
- Siemens
-25
-20
-15
-10
-5
0
-3.0
-3.5
-4.0
-4.5
-5.0
25 C
o
- 40 C
o
20
25 C
125 C
o
o
15
10
5
0
-5.5
-6.0
-6.5
-7.0
-7.5
0
-5
-10
-15
-20
-25
-30
-35
-40
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-80
-70
-60
-7
-50
-40
-30
-20
-10
0
-0.3
T
J
= 125 C
T
J
= 25 C
o
o
Fig. 10. Gate Charge
-10
-9
-8
V
DS
= - 50V
I
D
= -13A
I
G
= -1mA
I
S
- Amperes
V
GS
- Volts
-6
-5
-4
-3
-2
-1
0
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
0
5
10
15
20
25
30
35
40
45
50
55
V
SD
- Volts
Q
G
- NanoCoulombs
10,000
Fig. 11. Capacitance
- 100
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
25μs
100μs
Capacitance - PicoFarads
Ciss
1,000
- 10
I
D
- Amperes
Coss
1ms
10ms
-1
T
J
= 150 C
T
C
= 25 C
Single Pulse
- 0.1
o
o
100
C rss
100ms
DC
f
= 1 MHz
10
0
-5
-10
-15
-20
-25
-30
-35
-40
-1
- 10
- 100
- 1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY26P10T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
18
R
G
= 3Ω, V
GS
= -10V
17
V
DS
= - 50V
17
IXTA26P10T
IXTP26P10T
18
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 50V
t
r
- Nanoseconds
t
r
- Nanoseconds
16
I
D
= -13A
16
T
J
= 25 C
15
o
15
I
D
= - 26A
14
14
T
J
= 125 C
o
13
13
12
25
35
45
55
65
75
85
95
105
115
125
12
-12
-14
-16
-18
-20
-22
-24
-26
T
J
- Degrees Centigrade
I
D
- Amperes
50
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
t
r
o
35
14
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
t
f
t
d(off)
70
t
d(on)
30
13
40
T
J
= 125 C, V
GS
= -10V
V
DS
= - 50V
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 50V
60
t
d(off)
- Nanoseconds
t
d(on)
- Nanoseconds
t
f
- Nanoseconds
t
r
- Nanoseconds
12
50
30
I
D
= -13A, - 26A
20
25
11
40
20
10
I
D
= -13A, - 26A
9
30
10
15
20
0
3
4
5
6
7
8
9
10
11
12
13
14
15
10
8
25
35
45
55
65
75
85
95
105
115
10
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
14
48
35
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
t
f
t
d(off)
o
80
t
f
13
V
DS
= - 50V
t
d(off)
44
30
R
G
= 3Ω, V
GS
= -10V
T
J
= 125 C, V
GS
= -10V
V
DS
= - 50V
70
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
12
40
25
I
D
= -13A
60
11
T
J
= 25 C, 125 C
o
o
36
20
50
10
32
15
I
D
= - 26A
40
9
28
10
30
8
-12
-14
-16
24
5
3
4
5
6
7
8
9
10
11
12
13
14
15
20
I
D
- Amperes
-18
-20
-22
-24
-26
R
G
- Ohms
© 2017 IXYS CORPORATION, All Rights Reserved
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