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SB180

Description
1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size476KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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SB180 Overview

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

SB180 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionD4, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingMATTE TIN
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Maximum power consumption limit1.25 W
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage80 V
Maximum average forward current1 A
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SCHOTTKY BARRIER RECTIFIERS
SB120 - SB1A0
DO-41P
Axial Lead Plastic
Package
For use in Low Voltage, High Frequency Inverters, Free Wheeling Diodes and Polarity Protection Applications
Maximum RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating @ 25ºC Ambient Temperature unless specified otherwise. Single Phase, half wave Resistive or
Inductive Load. For Capacitive Load, Derate by 20%)
DESCRIPTION
SYMBOL SB120 SB130 SB140 SB150 SB160 SB180 SB1A0 UNIT
Maximum Peak Repetitive Reverse Voltage
V
RRM
20
30
40
50
60
80
100
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Forward Rectified Current
0.375"(9.5mm) Lead Length @ T
L
=75
o
C
Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on
rated load
Maximum Forward Voltage @ I
F
=1.0A
o
Maximum DC Reverse Current T
a
=25 C
@ Rated DC Blocking Voltage T
a
=100
o
C
Junction Capacitance
V
RMS
V
DC
I
(AV)
I
FSM
*V
F
*I
R
***C
j
**R
th (j-a)
**R
th (J-L)
T
j
T
stg
14
20
21
30
28
40
35
50
1.0
40
42
60
57
80
71
100
V
V
A
A
0.55
0.5
10
0.7
0.75
0.83
V
mA
mA
pF
ºC/W
ºC/W
TYP110
TYP50
TYP15
-65 to +125
- 65 to +150
-65 to +150
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Lead
Operating Junction Temperature Range
Storage Temperature Range
ºC
ºC
* Pulse Width=300µs, 1% Duty Cycle.
µ
** Thermal Resistance (from Junction to Ambient) Vertical P.C.B. Mounted with 1.5 x 1.5" (38 x 38mm) Copper
Pads
***Measured @ 1MHz and Reverse Voltage 0f 4V
SB120_SB1A01Rev200105E
Continental Device India Limited
Data Sheet
Page 1 of 5

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