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2N1893

Description
500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size110KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N1893 Overview

500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N1893 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionTO-39, 3 PIN
stateCONSULT MFR
packaging shaperound
Package Sizecylindrical
Terminal formWire
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsMetal
Number of components1
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency50 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS
2N 1893
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total DeviceDissipation @ Ta=25ºC
Derate Above 25ºC
Total Deivice Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
SYMBOL
V
CEO
V
CER
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
7.0
0.5
0.8
4.57
3.0
17.2
-65 to +200
VALUE
80
100
120
UNITS
V
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
219
58.3
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
BV
CER(sus)
I
C
=100mA,R
BE
=10Ω
Collector Emitter Breakdown Voltage
BV
CEO(sus)
* I
C
=10mA, I
B
=0
Collector Emitter Sustaining Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
*
I
C
=100µA, I
E
=0
I
E
=100µA, I
C
=0
V
CB
=90V, I
E
=0
V
CB
=90V, I
E
=0,T
A
=150ºC
V
EB
=5V,I
C
=0
I
C
=1mA,V
CE
=10V
I
C
=10mA,V
CE
=10V
I
C
=10mA,V
CE
=10V
T
C
=-55ºC
Collector Emitter (Sat) Voltage
Base Emitter (Sat) Voltage
V
CE(Sat)
V
BE(Sat)
I
C
=150mA,V
CE
=10V
I
C
=50mA,I
B
=5.0mA
I
C
=150mA,I
B
=15mA
I
C
=50mA,I
B
=5.0mA
I
C
=150mA,I
B
=15mA
Data Sheet
MIN
100
80
120
7.0
MAX
UNITS
V
V
V
V
10
15
10
20
35
20
40
120
1.2
5.0
0.9
1.3
nA
µA
nA
V
V
V
Continental Device India Limited
Page 1 of 4
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