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2N2102

Description
1000 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size105KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2102 Overview

1000 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N2102 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1 A
Maximum Collector-Emitter Voltage65 V
Processing package descriptionTO-39, 3 PIN
stateCONSULT MFR
packaging shaperound
Package Sizecylindrical
Terminal formWire
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsMetal
Number of components1
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor40
Rated crossover frequency60 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage, R
BE
< 10Ω
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Derate Above 25ºC
Power Dissipation @ T
c
=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
SYMBOL
V
CEO
V
CER
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
VALUE
65
80
120
7.0
1.0
1.0
5.71
5.0
28.6
- 65 to +200
UNIT
V
V
V
V
A
mW
mW/ ºC
W
mW/ ºC
ºC
**R
th (j-a)
R
th (j-c)
175
35
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
V
CER
I
C
=1mA, R
BE
=10
Collector Emitter Voltage
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
V
CEX
Collector Emitter Voltage
I
C
=100µA, V
EB
=1.5V
V
CBO
Collector Base Voltage
I
C
=100µA, I
E
=0
V
EBO
I
E
=100µA, I
C
=0
Emitter Base Voltage
I
CBO
V
CB
=60V, I
E
=0
Collector Cut Off Current
V
CB
=60V, I
E
=0, T
a
=150ºC
Emitter Cut Off Current
DC Current Gain
I
EBO
h
FE
V
EB
=5V, I
C
=0
I
C
=0.1mA, V
CE
=10V
*I
C
=10mA, V
CE
=10V
*I
C
=10mA, V
CE
=10V, T
a
=55ºC
*I
C
=150mA, V
CE
=10V
*I
C
=500mA, V
CE
=10V
*I
C
=1A, V
CE
=10V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
µ
**R
th (j-a)
is measured with the device soldered into a typical printed circuit board
2N2102Rev_1 040904E
MIN
80
65
120
120
7
TYP
MAX
2
2
2
20
35
20
40
25
10
UNIT
V
V
V
V
V
nA
µA
nA
120
Continental Device India Limited
Data Sheet
Page 1 of 4

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