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2N2221A

Description
800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
Categorysemiconductor    Discrete semiconductor   
File Size91KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2221A Overview

800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA

2N2221A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time35 ns
Maximum off time285 ns
Maximum collector current0.8000 A
Maximum Collector-Emitter Voltage50 V
Processing package descriptionTO-18, 3 PIN
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.5000 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor20
Rated crossover frequency250 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A
2N2222A
TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2221A,22A
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
VCEO
40
Collector -Emitter Voltage
VCBO
75
Collector -Base Voltage
VEBO
6.0
Emitter -Base Voltage
IC
800
Collector Current Continuous
PD
500
Power Dissipation @Ta=25 degC
2.28
Derate Above 25deg C
PD
1.2
@ Tc=25 degC
6.85
Derate Above 25deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VALUE
MIN
MAX
40
-
75
-
6.0
-
-
10
UNIT
V
V
V
nA
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=60V, IE=0
ICEX
VCE=60V, VEB=3V
IEBO
VEB=3V, IC=0
IBL
VCE=60V, VEB=3V
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
-
-
-
-
-
-
-
10
10
10
20
0.3
1.0
0.6-1.2
2.0
uA
nA
nA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3

2N2221A Related Products

2N2221A 2N2222A
Description 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum on-time 35 ns 35 ns
Maximum off time 285 ns 285 ns
Maximum collector current 0.8000 A 0.5000 A
Maximum Collector-Emitter Voltage 50 V 40 V
state ACTIVE DISCONTINUED
packaging shape ROUND round
Package Size CYLINDRICAL cylindrical
Terminal form WIRE Wire
terminal coating TIN LEAD tin lead
Terminal location BOTTOM BOTTOM
Packaging Materials METAL Metal
structure SINGLE single
Number of components 1 1
transistor applications SWITCHING switch
Transistor component materials SILICON silicon
Maximum ambient power consumption 0.5000 W 0.4000 W
Transistor type GENERAL PURPOSE SMALL SIGNAL Universal small signal
Minimum DC amplification factor 20 100
Rated crossover frequency 250 MHz 300 MHz
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