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2N2270

Description
45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size101KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2270 Overview

45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N2270 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum Collector-Emitter Voltage45 V
Processing package descriptionTO-39, 3 PIN
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor50
Rated crossover frequency100 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2270
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage, R
BE
< 10Ω
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Derate Above 25ºC
Power Dissipation @ T
c
=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
SYMBOL
V
CEO
V
CER
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
VALUE
45
60
60
7.0
1.0
1.0
5.71
5.0
28.6
- 65 to +200
UNIT
V
V
V
V
A
W
mW/ ºC
W
mW/ ºC
ºC
R
th (j-a)
R
th (j-c)
175
35
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
V
CER
I
C
=1mA, R
BE
=10Ω
Collector Emitter Voltage
V
CBO
Collector Base Voltage
I
C
=100µA, I
E
=0
V
EBO
I
E
=100µA, I
C
=0
Emitter Base Voltage
I
CBO
V
CB
=60V, I
E
=0
Collector Cut Off Current
V
CB
=60V, I
E
=0, T
a
=150ºC
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
I
EBO
*V
CE (sat)
*V
BE (sat)
*h
FE
V
EB
=5V, I
C
=0
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
I
C
=1mA, V
CE
=10V
I
C
=150mA, V
CE
=10V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
µ
MIN
45
60
60
7
TYP
MAX
50
100
100
0.9
1.2
30
50
200
UNIT
V
V
V
V
nA
µA
nA
V
V
2N2270Rev_1 040904E
Continental Device India Limited
Data Sheet
Page 1 of 4

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Index Files: 735  1362  1848  707  1738  15  28  38  35  39 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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