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2N2904

Description
600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Categorysemiconductor    Discrete semiconductor   
File Size85KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2904 Overview

600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2904
2N2905
TO-39
Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Derate Above 25ºC
Power Dissipation @ T
c
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
VALUE
40
60
5
600
600
3.43
3.0
17.2
- 65 to +200
UNIT
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
*V
CEO
I
C
=10mA, I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=10µA, I
E
=0
Collector Base Voltage
V
EBO
I
E
=10µA, I
C
=0
Emitter Base Voltage
Collector Cut Off Current
Collector Cut Off Current
I
CEX
I
CBO
V
CE
=30V, V
BE
=0.5V
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0,
T
a
=150ºC
Base Current
I
B
V
CE
=30V, V
BE
=0.5V
MIN
40
60
5
TYP
MAX
UNIT
V
V
V
50
20
20
50
nA
nA
µA
nA
2N2904
DC Current Gain
h
FE
I
C
=0.1mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
*I
C
=150mA, V
CE
=10V
*I
C
=500mA, V
CE
=10V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
µ
2N2904_2905Rev_1 310303E
2N2905
>35
>50
>75
100 - 300
>30
>20
>25
>35
40 - 120
>20
Continental Device India Limited
Data Sheet
Page 1 of 4

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