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2N2905A

Description
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size103KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2905A Overview

600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N2905A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum on-time45 ns
Maximum off time100 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage60 V
stateDISCONTINUED
packaging shaperound
Package Sizecylindrical
Terminal formWire
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.6000 W
Transistor typeUniversal small signal
Minimum DC amplification factor50
Rated crossover frequency200 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2904A
2N2905A
TO-39
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2904A, 05A
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
VCEO
60
Collector -Emitter Voltage
VCBO
60
Collector -Base Voltage
VEBO
5.0
Emitter -Base Voltage
IC
600
Collector Current Continuous
PD
600
Power Dissipation @Ta=25 degC
3.43
Derate Above 25deg C
PD
3.0
@ Tc=25 degC
17.2
Derate Above 25deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL
VCEO*
VCBO
VEBO
ICBO
TEST CONDITION
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
VALUE
MIN
MAX
60
-
60
-
5.0
-
-
10
UNIT
V
V
V
nA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=50V, IE=0
ICEX
VCE=30V, VBE=0.5V
IB
VCE=30V, VBE=0.5V
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
-
-
-
-
-
-
2N2904A
>40
>40
>40
40-120
>40
10
50
50
0.4
1.6
1.3
2.6
2N2905A
>75
>100
>100
100-300
>50
uA
nA
nA
V
V
V
V
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
Continental Device India Limited
Data Sheet
Page 1 of 3

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