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2N3251

Description
200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
Categorysemiconductor    Discrete semiconductor   
File Size74KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N3251 Overview

200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N3250, A/ 2N3251,A
TO-18
Metal Can Package
Designed for Small Signal, General Purpose and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Derate Above 25ºC
Power Dissipation @ T
c
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
2N3250
2N3251
40
50
5
200
360
2.06
1.2
6.9
- 65 to +200
2N3250A
2N3251A
60
60
UNIT
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
R
th (j-a)
R
th (j-c)
490
150
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cutoff Current
Base Cutoff Current
DESCRIPTION
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
*V
CEO
V
CBO
V
EBO
I
CEX
I
BL
SYMBOL
*V
CE (sat)
*V
BE (sat)
I
C
=10mA, I
B
=0
I
C
=10µA, I
E
=0
I
E
=10µA, I
C
=0
V
CE
=40V, V
BE
=3V
V
CE
=40V, V
BE
=3V
TEST CONDITION
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
µ
2N3250_A_2N3251_ARev_1 311003D
2N3250
2N3251
>40
>50
>5
<20
<50
MIN
2N3250A UNIT
2N3251A
>60
V
>60
V
V
nA
nA
MAX
0.25
0.5
UNIT
V
V
V
V
0.6
0.9
1.2
Continental Device India Limited
Data Sheet
Page 1 of 4

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