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2N3635

Description
1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Categorysemiconductor    Discrete semiconductor   
File Size147KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N3635 Overview

1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR RF TRANSISTORS
2N3635
2N3636
2N3637
TO-39
Metal Can Package
2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching
and Low Power Amplifier.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
V
CBO
Collector Base Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
P
D
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
T
j
, T
stg
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
B
VCEO
* I
C
=10mA, I
B
=0
Collector Emitter Breakdown Voltage
2N3635
2N3636, 37
Collector Base Breakdown Voltage
2N3635
2N3636, 37
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
Collector Emitter Saturation Voltage
B
VCBO
I
C
=100µA, I
E
=0
140
175
B
VEBO
I
CBO
I
EBO
I
E
=10µA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=3V, I
C
=0
5
100
50
0.3
0.5
0.8
0.9
V
V
V
nA
nA
V
V
V
V
2N3635
140
140
2N3636, 37
175
175
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
5
1
1
5.71
5
28.6
-65 to +200
MIN
140
175
MAX
UNITS
V
V
V
CE( sat)
* I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
BE(Sat)
* I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
Base Emitter Saturation Voltage
0.65
Continental Device India Limited
Data Sheet
Page 1 of 4

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