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2N4036

Description
1000 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size80KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N4036 Overview

1000 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N4036 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage65 V
Processing package descriptionTO-39, 3 PIN
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor20
Rated crossover frequency60 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
2N4036
TO-39
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
VCEO
65
Collector -Emitter Voltage
VCBO
90
Collector -Base Voltage
VEBO
7.0
Emitter Base Voltage
IB
0.5
Base Current
IC
1.0
Collector Current -Continuous
PD
5.0
Power Dissipation @ Tc=25 deg C
28.6
Linear Derating Factor
PD
1.0
Power Dissipation @ Ta=25 deg C
5.72
Linear Derating Factor
Tj, Tstg
-65 to +200
Operating & Storage Junction
Temperature Range
TL
230
Lead Temperature 1/16" from Case
for 10 Seconds
Thermal Resistance
Rth (j-c)
35
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VCEO IC=10mA, IB=0
Collector -Emitter Voltage
VCBO IC=100uA, IE=0
Collector -Base Voltage
ICEX VCE=85V, VBE=1.5V
Collector Cut off Current
ICBO VCB=90V, IE=0
IEBO VBE=7V, IC=0
Emitter Cut off Current
hFE
0.1mA, VCE=10V
DC Current Gain
IC=150mA, VCE=2V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
VCE(sat) IC=150mA, IB=15mA
Collector -Emitter (sat) Voltage
VBE(sat) IC=150mA, IB=15mA
Base -Emitter (sat) Voltage
Small- Signal Characteristics
lhfel
IC=50mA,VCE=10V, f=20MHz
Current Gain- High Frequency
Switching Characteristics
Rise time
Sorage time
Fall time
Turn-on time
Turn-off time
UNIT
V
V
V
A
A
W
mW/deg C
W
mW/deg C
deg C
deg C
deg C/W
MIN
65
90
-
-
-
20
20
40
20
-
-
3.0
TYP
-
-
-
MAX
-
0.1
1.0
10
-
200
140
-
0.65
1.4
-
UNIT
V
V
mA
uA
uA
-
-
V
V
-
tr
ts
tf
ton
toff
IB1=15mA,IC=150mA, VCE=30V
IB2=15mA,IC=150mA, VCE=30V
IB2=15mA,IC=150mA, VCE=30V
IC=150mA, VCE=30V, IB1=IB2=
15mA
-
-
-
-
-
70
600
100
110
700
ns
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 2

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