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2N5172

Description
SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size85KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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SMALL SIGNAL TRANSISTOR

2N5172 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2N5172
TO-92
Plastic Package
E
CB
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
25
25
5
100
625
5
1.5
12
- 55 to +150
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
200
83.3
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
SYMBOL TEST CONDITION
V
CEO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
C
=10mA,I
B
=0
V
CB
=25V, I
E
=0
V
CB
=25V,I
E
=0,Ta=100ºC
V
CE
=25V, V
BE
=0V
V
EB
=5V, I
C
= 0
V
CE
=10V,I
C
=10mA
I
C
=10mA,I
B
=1mA
I
C
=10mA,I
B
=1mA
V
CE
=10V,I
C
=10mA
0.5
0.75
1.2
100
MIN
25
100
10
100
100
500
0.25
V
V
V
nA
µA
nA
nA
TYP
MAX
UNITS
f
T
C
Cb
h
fe
I
C
=2mA, V
CE
=5V
I
E
=0, V
CB
=0V,f=1MHz
V
CE
=10V,I
C
=10mA
f=1kHz
1.6
100
120
10
750
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3

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