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2N5322PNP

Description
4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
Categorysemiconductor    Discrete semiconductor   
File Size64KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric Compare View All

2N5322PNP Overview

4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5

2N5322PNP Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage50 V
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor40
Rated crossover frequency50 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER SWITCHING TRANSISTORS
2N5320, 2N5321 NPN
2N5322, 2N5323 PNP
TO-39
Metal Can Package
Medium Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current
Power Dissipation@ T
a
=25ºC
Derate Above 25ºC
Power Dissipation@ T
c
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
j
, T
stg
2N5320
75
100
7
2N5321
50
75
5
2.0
1.0
1
5.71
10
57.14
- 65 to +200
2N5322
75
100
7
2N5323
50
75
5
UNITS
V
V
V
A
A
W
mW/ ºC
W
mW/ ºC
ºC
R
th (j-a)
R
th (j-c)
175
17.5
MIN
75
50
5
MAX
ºC/W
ºC/W
UNITS
V
V
mA
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
I
C
=100mA, I
B
=0
V
CEO
Collector Emitter Voltage
2N5320/5322
2N5321/5323
I
CEX
V
CE
=70V, V
BE
=1.5V, T
c
=150ºC
Collector Cut Off Current
2N5320/5322
V
CE
=45V, V
BE
=1.5V, T
c
=150ºC
2N5321/5323
V
CE
=100V, V
BE
=1.5V
2N5320/5322
V
CE
=75V, V
BE
=1.5V
2N5321/5323
V
BE
=5V, I
C
=0
2N5321/5323
V
BE
=7V, I
C
=0
2N5320/5322
5
100
100
100
100
mA
µA
µA
µA
µA
Emitter Cut Off Current
I
EBO
Continental Device India Limited
Data Sheet
Page 1 of 4

2N5322PNP Related Products

2N5322PNP 2N5321 2N5321NPN 2N5323 2N5320 2N5320NPN 2N5322 2N5323PNP
Description 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 MULTICOMP - 2N5323 - BIPOLAR TRANSISTOR; PNP; -50V TO-39 2000 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 2 A, 75 V, PNP, Si, POWER TRANSISTOR, TO-5 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
Number of terminals 3 3 3 - 3 3 3 3
Transistor polarity NPN NPN NPN - NPN NPN PNP NPN
Maximum collector current 4 A 4 A 4 A - 2 A 4 A 2 A 4 A
Maximum Collector-Emitter Voltage 50 V 50 V 50 V - 75 V 50 V 75 V 50 V
state ACTIVE ACTIVE ACTIVE - ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape ROUND ROUND ROUND - ROUND ROUND ROUND ROUND
Package Size CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Terminal form WIRE WIRE WIRE - WIRE WIRE WIRE WIRE
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - TIN LEAD NOT SPECIFIED TIN LEAD NOT SPECIFIED
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM
Packaging Materials METAL METAL METAL - METAL METAL METAL METAL
structure SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR COLLECTOR - - COLLECTOR - COLLECTOR
Number of components 1 1 1 - 1 1 1 1
Transistor component materials SILICON SILICON SILICON - SILICON SILICON SILICON SILICON
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL - GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE POWER GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 40 40 40 - 30 40 30 40
Rated crossover frequency 50 MHz 50 MHz 50 MHz - 50 MHz 50 MHz 50 MHz 50 MHz
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