EEWORLDEEWORLDEEWORLD

Part Number

Search

2N5401

Description
200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size236KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric View All

2N5401 Online Shopping

Suppliers Part Number Price MOQ In stock  
2N5401 - - View Buy Now

2N5401 Overview

200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N5401 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage150 V
stateDISCONTINUED
packaging shaperound
Package Sizecylindrical
Terminal formWire
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.6250 W
Transistor typeUniversal small signal
Minimum DC amplification factor50
Rated crossover frequency100 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5401
TO-92
CBE
E
BC
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
VCEO
150
Collector -Emitter Voltage
VCBO
160
Collector -Base Voltage
VEBO
5.0
Emitter -Base Voltage
IC
600
Collector Current Continuous
PD
625
Power Dissipation @Ta=25 degC
5.0
Derate Above 25 deg C
PD
1.5
Power Dissipation @Tc=25 degC
12
Derate Above 25 deg C
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-c)
83.3
Junction to Case
Rth(j-a)
200
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VCEO*
IC=1mA,IB=0
150
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
160
Collector -Base Voltage
VEBO
IE=10uA, IC=-0
5.0
Emitter -Base Voltage
ICBO
VCB=160V, IE=0
-
Collector-Cut off Current
Ta=100 deg C
VCB=160V, IE=0
IEBO
VEB=4V, IC=0
hFE*
IC=1mA,VCE=5V
IC=10mA,VCE=5V
IC=50mA,VCE=5V
VCE(Sat)* IC=10mA,IB=1mA
IC=50mA,IB=5mA
VBE(Sat) * IC=10mA,IB=1mA
IC=50mA,IB=5mA
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C/W
deg C/W
TYP
-
-
-
-
MAX
-
-
-
50
UNIT
V
V
V
nA
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
50
60
50
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
-
240
-
0.2
0.5
1.0
1.0
uA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 707  1071  2026  2208  1341  15  22  41  45  27 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号