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2N5416

Description
1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
Categorysemiconductor    Discrete semiconductor   
File Size145KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N5416 Overview

1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

2N5416 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage300 V
Processing package descriptionTO-5, 3 PIN
stateACTIVE
packaging shaperound
Package Sizecylindrical
Terminal formWire
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Number of components1
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor30
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON HIGH VOLTAGE TRANSISTOR
2N 5415, 16
TO-39
Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military,
Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N5415
V
CEO
200
Collector Emitter Voltage
V
CBO
Collector Base Voltage
200
Emitter Base Voltage
Collector Current Continuous
Base Current Continuous
Power Dissipation @ Ta=50ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Junction Temperature
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
V
EBO
I
C
I
B
P
D
P
D
Tj
T
stg
4
2N5416
300
350
6
(--------------------1------------------)
(-----------------0.5------------------)
(--------------------1------------------)
(------------------10-------------------
(--------------------200-----------------
-65 to +200
UNITS
V
V
V
A
A
W
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
150
17.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
C
=50mA,I
B
=0
Collector Emitter Breakdown Voltage
BV
CEO(sus)
*
Collector Cut off Current
Collector Cutoff Current
Emitter Cut off Current
I
CBO
I
CEO
I
EBO
V
CB
=175V, I
E
=0
V
CB
=280V, I
E
=0
V
CE
=150V, I
B
=0
V
CE
=250V, I
B
=0
V
EB
=4V, I
C
=0
V
EB
=6V, I
C
=0
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
V
CE(Sat)
V
BE(Sat)
h
FE
*
I
C
=50mA,I
B
=5mA
I
C
=50mA,I
B
=5mA
I
C
=50mA,V
CE
=10V
2N5415
>200
<50
2N5416
>300
<50
UNITS
V
µA
µA
µA
µA
µA
µA
V
V
<50
<50
<20
<20
<2.5
<1.5
30-150
<2
<1.5
30-120
Continental Device India Limited
Data Sheet
Page 1 of 4

2N5416 Related Products

2N5416 2N5415
Description 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum collector current 1 A 1 A
Maximum Collector-Emitter Voltage 300 V 200 V
state ACTIVE DISCONTINUED
packaging shape round round
Package Size cylindrical cylindrical
Terminal form Wire Wire
terminal coating tin lead tin lead
Terminal location BOTTOM BOTTOM
Packaging Materials Metal Metal
structure single single
Number of components 1 1
Transistor component materials silicon silicon
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 30 30
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