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2N6036

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size61KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N6036 Overview

POWER TRANSISTOR

2N6036 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER DARLINGTON TRANSISTORS
(PNP)
2N6034, 2N6035, 2N6036
(NPN)
2N6037, 2N6038, 2N6039
TO126
Plastic Package
EC
B
Designed for General -Purpose Amplifier & Low Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current (Peak Value)
Base Current
Total Power Dissipation @ Tc=25ºC
o
Derate above 25 C
Total Power Dissipation @ Ta=25ºC
o
Derate above 25 C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
2n6034 2N6035 2N6036
2n6037 2N6038 2N6039
40
60
80
40
60
80
5.0
4.0
8.0
100
40
0.32
1.5
0.012
-65 to +150
UNIT
V
V
V
A
A
mA
W
W/ºC
W
W/ºC
ºC
T
j
, T
stg
R
th(j-a)
R
th(j-c)
83.3
3.12
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
CEO(sus)
I
C
=100mA, I
B
=0
Collector Emitter (sus) Voltage
2N6034,2N6037
2N6035, 2N6038
2N6036, 2N6039
Collector Cut off Current
2N6034,2N6037
2N6035, 2N6038
2N6036, 2N6039
I
CEO
V
CE
=40V, I
B
=0
V
CE
=60V, I
B
=0
V
CE
=80V, I
B
=0
MIN
40
60
80
TYP
MAX
UNIT
V
V
V
100
100
100
µA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4
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