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2N6126

Description
4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size120KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N6126 Overview

4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220

2N6126 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current4 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionTO-220, 3 PIN
stateCONSULT MFR
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor10
Rated crossover frequency2.5 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
2N6121, 6122, 6123
2N6124, 6125, 6126
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
MIN .
14.42
9.63
3.56
MAX.
1 2
N
L
3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DEG 7
A
O
O
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 1.5 A; I
B
= 0.15 A
D.C. current gain
I
C
= 1.5 A; V
CE
= 2 V
V
CBO
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
6121 6122 6123
6124 6125 6126
max. 45
60
80
max. 45
60
80
max.
4.0
max.
40
max.
150
max.
min. 25
max. 100
0.6
25
100
20
80
V
V
A
W
°C
V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
V
CBO
V
CEO
V
EBO
All diminsions in mm.
K
6121 6122 6123
6124 6125 6126
max. 45
60
80
max. 45
60
80
max.
5.0
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3

2N6126 Related Products

2N6126 2N6121 2N6122 2N6123 2N6125 2N6124
Description 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 POWER TRANSISTOR
state CONSULT MFR CONSULT MFR CONSULT MFR CONSULT MFR CONSULT MFR ACTIVE
Transistor type universal power supply universal power supply universal power supply universal power supply universal power supply GENERAL PURPOSE POWER
Number of terminals 3 3 3 3 3 -
Transistor polarity PNP PNP PNP PNP PNP -
Maximum collector current 4 A 4 A 4 A 4 A 4 A -
Maximum Collector-Emitter Voltage 60 V 60 V 60 V 60 V 60 V -
Processing package description TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN -
packaging shape Rectangle Rectangle Rectangle Rectangle Rectangle -
Package Size Flange mounting Flange mounting Flange mounting Flange mounting Flange mounting -
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole -
terminal coating tin lead tin lead tin lead tin lead tin lead -
Terminal location single single single single single -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy -
structure single single single single single -
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR -
Number of components 1 1 1 1 1 -
transistor applications switch switch switch switch switch -
Transistor component materials silicon silicon silicon silicon silicon -
Minimum DC amplification factor 10 10 10 10 10 -
Rated crossover frequency 2.5 MHz 2.5 MHz 2.5 MHz 2.5 MHz 2.5 MHz -

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