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2N5550

Description
NPN high-voltage transistors
Categorysemiconductor    Discrete semiconductor   
File Size167KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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NPN high-voltage transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5550
TO-92
Plastic Package
High Voltage NPN Transistor For General Purpose and Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
V
CEO
140
Collector Emitter Voltage
V
CBO
Collector Base Voltage
160
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
V
EBO
I
C
P
D
P
D
T
j
, T
stg
6
600
625
5.0
1.5
12
-55 to +150
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th(j-a) (1)
357
ºC/W
ºC/W
R
th(j-c)
Junction to case
125
(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board
Continental Device India Limited
Data Sheet
Page 1 of 4
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