Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
2N6109
2N6109
PNP PLASTIC POWER TRANSISTOR
General Purpose Amplifier and Switching Application
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
M IN.
14.42
9.63
3.56
M A X.
N
L
O
1 2 3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
A
O
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 2.5A; I
B
= 0.25A
D.C. current gain
I
C
= 2.5A; V
CE
= 4V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
All dim insions in m m .
K
V
CBO
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
max.
max.
max.
max.
max.
max.
min.
max.
60
50
7.0
40
150
V
V
A
W
°C
1.0 V
30
150
V
CBO
V
CEO
V
EBO
I
C
max.
max.
max.
max.
60
50
5.0
7.0
V
V
V
A
Continental Device India Limited
Data Sheet
Page 1 of 3
2N6109
Collector current (Peak value)
Base current
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
From junction to case
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
B
= 0; V
CE
= 40V
V
EB(off)
= 1.5V; V
CE
= 60V
V
EB(off)
= 1.5V; V
CE
= 50V; T
C
= 150°C
Emitter cut-off current
I
C
= 0; V
EB
= 5V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 2.5 A; I
B
= 0.25 A
I
C
= 7 A; I
B
= 3 A
Base emitter on voltages
I
C
= 2.5A; V
CE
= 4V
I
C
= 7A; V
CE
= 4V
D.C. current gain
I
C
= 2.5A; V
CE
= 4V
I
C
= 7A; V
CE
= 4V
Small-signal current gain f = 50 KHz
I
C
= 0.5A; V
CE
= 4V
Output capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10V
Transition frequency at f = 1 MHz
I
C
= 500 mA; V
CE
= 4V
* Pulse test: pulse width
≤
300 µs; duty cycle
≤
2%.
(1) f
T
= |h
fe
|• f
test
I
C
I
B
P
tot
T
j
T
stg
R
th j–c
max.
10 A
max.
3.0 A
max.
40 W
max.
0.32 W/°C
max.
150 ºC
–65 to +150 ºC
3.125 °C/W
I
CEO
I
CEX
I
CEX
I
EBO
V
CEO(sus)
*
V
CBO
V
EBO
V
CEsat
*
V
CEsat
*
V
BE(on)
*
V
BE(on)
*
h
FE
*
h
FE
*
h
fe
C
o
f
T
(1)
max.
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
max.
min.
min.
max.
min.
1.0 mA
0.1 mA
2.0 mA
1.0 mA
50 V
60 V
5.0 V
1.0 V
3.5 V
1.5 V
3.0 V
30
150
2.3
20
250 pF
10 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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