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2N6718

Description
2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237AA
Categorysemiconductor    Discrete semiconductor   
File Size88KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric View All

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2N6718 Overview

2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237AA

2N6718 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current2 A
Maximum Collector-Emitter Voltage100 V
Processing package descriptionPLASTIC, TO-237, 3 PIN
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption1 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor50
Rated crossover frequency50 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2N6718
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
P
D
Total Power Dissipation
T
j
, T
stg
Operating And Storage Junction
Temperature Range
VALUE
100
100
5
1.5
850
-55 to +150
UNIT
V
V
V
A
mW
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
I
CBO
V
CB
=80V, I
E
=0
Collector Cut off Current
I
EBO
V
EB
=4V, I
C
=0
Emitter Cut off Current
h
FE
I
C
=50mA,V
CE
=1V
DC Current Gain
I
C
=250mA,V
CE
=1V
I
C
=500mA,V
CE
=1V
V
CE(sat)
I
C
=350mA,I
B
=35mA
Collector Emitter Saturation Voltage
f
T
V
CE
=1V, I
C
=200mA,
Transition Frequency
MIN
MAX
0.1
0.1
250
0.35
500
UNIT
µA
µA
80
50
20
50
V
MHz
Continental Device India Limited
Data Sheet
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