PD - 97217
DirectFET Power MOSFET
RoHs Compliant
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Switching and Conduction Losses
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
IRF6631PbF
IRF6631TRPbF
R
DS(on)
Q
gs2
1.1nC
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
4.4nC
R
DS(on)
Q
oss
7.3nC
30V max ±20V max 6.0mΩ@ 10V 8.3mΩ@ 4.5V
Q
rr
10nC
V
gs(th)
1.8V
12nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that
are critical in synchronous buck converter’s CtrlFET sockets.
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Parameter
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
30
±20
13
10
57
100
13
10
A
mJ
A
20
Typical RDS(on) (m
Ω)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
ID= 10A
VDS= 24V
VDS= 15V
ID = 13A
15
10
5
T J = 25°C
0
3
4
5
6
7
8
9
10
T J = 125°C
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.24mH, R
G
= 25Ω, I
AS
= 10A.
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1
05/29/06
IRF6631PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
23
6.0
8.3
1.8
-5.2
–––
–––
–––
–––
–––
12
3.4
1.1
4.4
3.1
5.5
7.3
1.6
15
18
18
4.9
1450
310
170
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
7.8
mΩ V
GS
= 10V, I
D
= 13A
i
V
GS
= 4.5V, I
D
= 10A
i
10.8
V
DS
= V
GS
, I
D
= 25µA
2.35
V
–––
1.0
150
100
-100
–––
18
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 10A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 10A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
i
I
D
= 10A
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
11
10
100
1.2
17
15
V
ns
nC
Min.
–––
Typ. Max. Units
–––
42
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 10A
di/dt = 500A/µs
i
See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6631PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
em
km
lm
fm
Parameter
Typ.
–––
12.5
20
–––
1.4
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
eÃ
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
1
τ
2
τ
3
τ
4
τ
5
τ
5
τ
A
1
Ri (°C/W)
1.6195
2.14056
22.2887
20.0457
11.9144
τi
(sec)
0.000126
0.001354
0.375850
7.41
99
0.1
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6631PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10
1
≤
60µs PULSE WIDTH
0.1
2.5V
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Tj = 25°C
1
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 10V
≤60µs
PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
Fig 5.
Typical Output Characteristics
2.0
ID = 13A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
V GS = 10V
V GS = 4.5V
1.5
1.0
1
0.1
1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
50
T = 25°C
J
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
40
C, Capacitance(pF)
Ciss
1000
30
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
20
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
10
0
0
20
40
60
80
100
120
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6631PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
T J = 25°C
T J = -40°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
1msec
10
10
10msec
1
VGS = 0V
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
1
T A = 25°C
T J = 150°C
Single Pulse
0.0
0.1
1.0
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
60
50
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11.
Maximum Safe Operating Area
2.5
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 50µA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
3.1A
4.5A
BOTTOM 10A
50
40
30
20
10
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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