AOT25S65/AOB25S65/AOTF25S65
650V 25A
α
MOS
TM
Power Transistor
General Description
The AOT25S65 & AOB25S65 & AOTF25S65 have been
fabricated using the advanced
αMOS
TM
high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
750V
104A
0.19Ω
26.4nC
5.8µC
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT25S65L & AOB25S65 & AOTF25S65L
Top View
TO-220
TO-220F
TO-263
D
2
PAK
D
D
G
AOT25S65
D
S
G
AOTF25S65
D
S
G
AOB25S65
S
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
AOT25S65/AOB25S65
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy
C
G
AOTF25S65
650
±30
25*
16*
104
7
96
750
AOTF25S65L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
o
25
16
25*
16*
A
A
mJ
mJ
40
0.3
W
W/
o
C
V/ns
°
C
°
C
AOTF25S65L
65
--
3.1
Units
°
C/W
°
C/W
°
C/W
Single pulsed avalanche energy
T
C
=25°
C
B
Power Dissipation
Derate above 25 C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
A,D
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
357
2.9
50
0.4
100
20
-55 to 150
300
AOT25S65/AOB25S65
65
0.5
0.35
AOTF25S65
65
--
2.5
Maximum Junction-to-Ambient
R
θCS
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev1: Mar 2012
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Page 1 of 7
AOT25S65/AOB25S65/AOTF25S65
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
I
D
=250µA, V
GS
=0V, T
J
=25°
C
C
I
D
=250µA, V
GS
=0V, T
J
=150°
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=150°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V,I
D
=250µA
V
GS
=10V, I
D
=12.5A, T
J
=25°
C
C
V
GS
=10V, I
D
=12.5A, T
J
=150°
C
I
S
=12.5A,V
GS
=0V, T
J
=25°
650
700
-
-
-
2.6
-
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
-
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
-
-
-
V
GS
=10V, V
DS
=480V, I
D
=12.5A
-
-
-
V
GS
=10V, V
DS
=400V, I
D
=12.5A,
R
G
=25Ω
I
F
=12.5A,dI/dt=100A/µs,V
DS
=400V
I
F
=12.5A,dI/dt=100A/µs,V
DS
=400V
-
-
-
-
-
-
236.7
1.4
4.9
26.4
6.2
9.5
29
30
112
34
408
33
8.27
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
-
750
-
10
-
3.3
0.165
0.47
0.84
-
-
1278
87
64.5
-
-
1
-
±100
4
0.19
0.53
-
25
104
-
-
-
V
µA
nΑ
V
Ω
Ω
V
A
A
pF
pF
pF
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
o(er)
C
o(tr)
C
rss
R
g
Output Capacitance
Effective output capacitance, energy
related
H
Effective output capacitance, time
related
I
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=100V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
I
rm
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Body Diode Reverse Recovery Charge I
F
=12.5A,dI/dt=100A/µs,V
DS
=400V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
C,
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep initial T
J
C,
=25°
C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
C
G. L=60mH, I
AS
=5A, V
DD
=150V, Starting T
J
=25°
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Mar 2012
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Page 2 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
6V
I
D
(A)
5.5V
20
5V
10
V
GS
=4.5V
0
0
5
10
15
20
V
DS
(Volts)
Figure 1: On-Region Characteristics@25°C
1000
V
DS
=20V
125°C
-55°C
0.4
R
DS(ON)
(
Ω
)
0.5
I
D
(A)
30
7V
25
20
15
5V
10
5
0
0
5
10
15
20
V
DS
(Volts)
Figure 2: On-Region Characteristics@125°C
V
GS
=4.5V
35
10V
30
6V
7V
5.5V
100
10
I
D
(A)
0.3
V
GS
=10V
0.2
1
25°C
0.1
0.1
0.01
2
4
6
8
10
V
GS
(Volts)
Figure 3: Transfer Characteristics
0.0
0
30
40
50
60
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
10
20
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
1.2
BV
DSS
(Normalized)
V
GS
=10V
I
D
=12.5A
1.1
1
0.9
0.8
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
-50
0.7
-100
-50
0
50
100
150
200
T
J
(
o
C)
Figure 6: Break Down vs. Junction Temperature
Rev1: Mar 2012
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Page 3 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
25°C
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
C
iss
Capacitance (pF)
1000
Eoss(uJ)
8
6
4
10
C
rss
1
0
100
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
200
600
2
0
0
100
300
400
500
V
DS
(Volts)
Figure 10: Coss stored Energy
200
600
E
oss
0
0
8
16
24
32
40
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
12
10
V
GS
(Volts)
9
125°C
15
12
V
DS
=480V
I
D
=12.5A
6
100
C
oss
1000
100
10
1
0.1
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)25S65 (Note F)
R
DS(ON)
limited
10µs
1000
100
R
DS(ON)
limited
10µs
100µs
1ms
10ms
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.1
1
10
100
0.1s
1s
I
D
(Amps)
100µs
DC
T
J(Max)
=150°C
T
C
=25°C
1ms
10ms
I
D
(Amps)
10
1
0.01
1000
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF25S65(Note F)
Rev1: Mar 2012
www.aosmd.com
Page 4 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
900
750
10µs
100µs
1ms
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.1
1
10
100
10ms
0.1s
1s
150
0
1000
25
50
75
100
125
150
175
V
DS
(Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF25S65L(Note F)
T
CASE
(°C)
Figure 14: Avalanche energy
E
AS
(mJ)
R
DS(ON)
limited
600
450
300
100
I
D
(Amps)
Current rating I
D
(A)
10
0.01
30
25
20
15
10
5
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 15: Current De-rating (Note B)
Rev1: Mar 2012
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Page 5 of 7
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