J/SST201 Series
Vishay Siliconix
N-Channel JFETs
J201
J202
J204
PRODUCT SUMMARY
Part Number
J/SST201
J/SST202
J/SST204
SST201
SST202
SST204
V
GS(off)
(V)
−0.3
to
−1.5
−0.8
to
−4
−0.3
to
−2
V
(BR)GSS
Min (V)
−40
−40
−25
g
fs
Min (mS)
0.5
1
0.5
I
DSS
Min (mA)
0.2
0.9
0.2
FEATURES
D
D
D
D
Low Cutoff Voltage: J201 <1.5 V
High Input Impedance
Very Low Noise
High Gain: A
V
= 80 @ 20
mA
BENEFITS
D
Full Performance from Low Voltage
Power Supply: Down to 1.5 V
D
Low Signal Loss/System Error
D
High System Sensitivity
D
High Quality Low-Level Signal
Amplification
APPLICATIONS
D
High-Gain, Low-Noise Amplifiers
D
Low-Current, Low-Voltage
Battery-Powered Amplifiers
D
Infrared Detector Amplifiers
D
Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
1
D
2
S
G
3
2
1
TO-236
(SOT-23)
D
S
3
G
Top View
Top View
J201
J202
J204
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
1
J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40
V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a.
Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201
J/SST202
J/SST204
c
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
V
GS(F)
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 15 V, I
D
= 10 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
=
−20
V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 10 V, I
D
= 0.1 mA
V
DS
= 15 V, V
GS
=
−5
V
I
G
= 1 mA , V
DS
= 0 V
−2
−1
−2
2
0.7
−40
−0.3
0.2
−1.5
1
−100
−40
−0.8
0.9
−4
4.5
−100
−25
−0.3
0.2
−2
3
−100
V
mA
pA
nA
pA
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
C
iss
C
rss
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
4.5
pF
1.3
6
nV⁄
√Hz
NPA, NH
0.5
1
0.5
mS
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
www.vishay.com
2
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
I
DSS
−
Saturation Drain Current (mA)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
5
Gate Leakage Current
10 nA
g
fs
−
Forward Transconductance (mS)
I
G
@ I
D
= 500
mA
I
D
= 100
mA
1 nA
I
G
−
Gate Leakage (A)
T
A
= 125_C
I
GSS
@ 125_C
I
D
= 500
mA
I
D
= 100
mA
1 pA
T
A
= 25_C
I
GSS
@ 25_C
8
4
6
g
fs
4
I
DSS
3
100 pA
2
10 pA
2
1
0
0
−1
−2
−3
−4
−5
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
0.1 pA
0
15
V
DG
−
Drain-Gate Voltage (V)
30
1500
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
10
g
fs
−
Forward Transconductance (mS)
2
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
=
−1.5
V
V
DS
= 10 V
f = 1 kHz
1200
g
os
8
1.6
T
A
=
−55_C
g
os
−
Output Conductance (mS)
900
6
r
DS
4
1.2
25_C
0.8
600
300
r
DS
@ I
D
= 100
mA,
V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
0
0
−1
−2
−3
−4
−5
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
2
0.4
125_C
0
0
0.01
0.1
I
D
−
Drain Current (mA)
1
400
Output Characteristics
V
GS(off)
=
−0.7
V
V
GS
= 0 V
2
Output Characteristics
V
GS(off)
=
−1.5
V
360
−0.1
V
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
1.6
V
GS
= 0 V
1.2
−0.3
V
0.8
−0.6
V
0.4
−1.2
V
−0.9
V
240
160
−0.2
V
−0.3
V
80
−0.5
V
−0.4
V
0
0
4
8
12
16
20
V
DS
−
Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
0
0
4
8
12
16
20
V
DS
−
Drain-Source Voltage (V)
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3
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
500
Transfer Characteristics
V
GS(off)
=
−0.7
V
V
DS
= 10 V
2
Transfer Characteristics
V
GS(off)
=
−1.5
V
V
DS
= 10 V
400
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
1.6
T
A
=
−55_C
1.2
25_C
300
T
A
=
−55_C
25_C
200
125_C
100
0.8
0.4
125_C
0
0
−0.1
−0.2
−0.3
−0.4
−0.5
V
GS
−
Gate-Source Voltage (V)
0
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
1.5
g
fs
−
Forward Transconductance (mS)
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−0.7
V
V
DS
= 10 V
f = 1 kHz
4
g
fs
−
Forward Transconductance (mS)
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−1.5
V
V
DS
= 10 V
f = 1 kHz
1.2
T
A
=
−55_C
0.9
25_C
3.2
2.4
T
A
=
−55_C
25_C
0.6
125_C
0.3
1.6
0.8
125_C
0
0
0
−0.1
−0.2
−0.3
−0.4
−0.5
V
GS
−
Gate-Source Voltage (V)
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
200
Circuit Voltage Gain vs. Drain Current
g
fs
R
L
A
V
+
1
)
R g
L os
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
2000
On-Resistance vs. Drain Current
160
A
V
−
Voltage Gain
1600
V
GS(off)
=
−0.7
V
120
1200
80
−1.5
V
40
V
GS(off)
=
−0.7
V
800
−1.5
V
400
0
0.01
0.1
I
D
−
Drain Current (mA)
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1
0
0.01
0.1
I
D
−
Drain Current (mA)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
1
4
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
Common-Source Input Capacitance
vs. Gate-Source Voltage
C
rss
−
Reverse Feedback Capacitance (pF)
f = 1 MHz
5
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
f = 1 MHz
8
C
iss
−
Input Capacitance (pF)
4
6
V
DS
= 0 V
4
10 V
2
3
V
DS
= 0 V
2
1
10 V
0
0
−4
−8
−12
−16
−20
V
GS
−
Gate-Source Voltage (V)
0
0
−4
−8
−12
−16
−20
V
GS
−
Gate-Source Voltage (V)
3
Output Conductance vs. Drain Current
V
GS(off)
=
−1.5
V
V
DS
= 10 V
f = 1 kHz
Hz
20
Equivalent Input Noise Voltage vs. Frequency
V
DS
= 10 V
g
os
−
Output Conductance (µS)
2.4
16
en
−
Noise Voltage nV /
1.8
T
A
=
−55_C
0.8
12
I
D
@ 100
mA
25_C
8
V
GS
= 0 V
4
0.4
125_C
0
0.01
0.1
I
D
−
Drain Current (mA)
1
0
10
100
1k
f
−
Frequency (Hz)
10 k
100 k
300
Output Characteristics
V
GS(off)
=
−0.7
V
V
GS
= 0 V
1.0
Output Characteristics
V
GS(off)
=
−1.5
V
240
I
D
−
Drain Current (µA)
−0.1
180
−0.2
120
−0.5
−0.3
−0.4
I
D
−
Drain Current (mA)
0.8
V
GS
= 0 V
0.6
−0.3
0.4
−0.6
60
0.2
−0.9
−1.2
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
−
Drain-Source Voltage (V)
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
−
Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
5
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