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NTUD3171PZ

Description
SMALL SIGNAL, FET
Categorysemiconductor    Discrete semiconductor   
File Size113KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NTUD3171PZ Overview

SMALL SIGNAL, FET

NTUD3171PZ Parametric

Parameter NameAttribute value
Number of terminals6
Processing package description1 X 1 MM, LEAD FREE, ULTRA SMALL, CASE 527AD-01, 6 PIN
stateActive
jesd_30_codeR-PDSO-F6
jesd_609_codee3
moisture_sensitivity_levelNOT SPECIFIED
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_NOT SPECIFIED
qualification_statusCOMMERCIAL
surface mountYES
terminal coatingTIN
Terminal formFLAT
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
NTUD3171PZ
Small Signal MOSFET
−20
V,
−200
mA, Dual P−Channel,
1.0 x 1.0 mm SOT−963 Package
Features
Dual P−Channel MOSFET
Offers a Low R
DS(on)
Solution in the Ultra Small 1.0 x 1.0 mm
http://onsemi.com
Package
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
This is a Pb−Free Device
Applications
V
(BR)DSS
R
DS(ON)
MAX
5.0
W
@
−4.5
V
6.0
W
@
−2.5
V
7.0
W
@
−1.8
V
10
W
@
−1.5
V
D1
I
D
Max
−20
V
−0.2
A
D2
High Side Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
t
v
5s
t
p
= 10
ms
I
DM
T
J
,
T
STG
I
S
T
L
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
−200
−600
−55
to
150
−200
260
mA
°C
mA
°C
I
D
Symbol
V
DSS
V
GS
Value
−20
±8
−200
−140
−250
−125
mW
mA
Unit
V
V
G1
G2
S1
P−Channel
MOSFET
S2
PINOUT: SOT−963
S
1
1
6 D
1
G
1
2
5 G
2
D
2
3
Top View
4 S
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width
v300
ms,
duty cycle
v2%
MARKING
DIAGRAM
SOT−963
CASE 527AD
4
M
G
4M
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
August, 2008
Rev. 0
1
Publication Order Number:
NTUD3171PZ/D

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