3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
Symbol
R
qJA
Max
1000
600
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
=
−250
mA
V
GS
= 0 V, V
DS
=
−5.0
V
V
GS
= 0 V, V
DS
=
−5.0
V
V
GS
= 0 V, V
DS
=
−16
V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
GS(TH)
R
DS(ON)
V
GS
= V
DS
, I
D
=
−250
mA
V
GS
=
−4.5
V, I
D
=
−100
mA
V
GS
=
−2.5
V, I
D
=
−50
mA
V
GS
=
−1.8
V, I
D
=
−20
mA
V
GS
=
−1.5
V, I
D
=
−10
mA
V
GS
=
−1.2
V, I
D
=
−1.0
mA
Forward Transconductance
Source−Drain Diode Voltage
g
FS
V
SD
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=
−4.5
V, V
DD
=
−15
V,
I
D
=
−200
mA, R
G
= 2.0
W
f = 1 MHz, V
GS
= 0 V
V
DS
=
−15
V
V
DS
=
−5.0
V, I
D
=
−125
mA
V
GS
= 0 V, I
S
=
−10
mA
−0.4
2.0
2.6
3.4
4.0
6.0
0.35
−0.6
−1.0
S
V
−1.0
5.0
6.0
7.0
10
W
V
I
GSS
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
−20
−50
−100
−200
±100
nA
nA
V
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±5.0
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
13.5
3.8
2.0
pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
26
46
196
145
ns
4. Switching characteristics are independent of operating junction temperatures
ORDERING INFORMATION
Device
NTUD3171PZT5G
Package
SOT−963
(Pb−Free)
Shipping
†
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTUD3171PZ
TYPICAL CHARACTERISTICS
0.36
0.32
I
D
, DRAIN CURRENT (A)
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
0
1
2
3
4
5
1.2 V
2.0 V
V
GS
= 2.2 thru 5 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
1.8 V
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
0
1
2
3
4
V
DS
≥
5 V
T
J
=
−55°C
T
J
= 125°C
T
J
= 25°C
1.6 V
1.4 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
12
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
I
D
= 200 mA
T
J
= 25°C
8
4
Figure 2. Transfer Characteristics
T
J
= 25°C
3
V
GS
= 2.5 V
2
V
GS
= 4.5 V
1
4
0
1
2
3
4
5
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
1.75
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.50
1.25
1.00
0.75
0.50
−50
10
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
I
D
= 200 mA
V
GS
= 4.5 V
1000
T
J
= 150°C
100
T
J
= 125°C
−25
0
25
50
75
100
125
150
0
4
8
12
16
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTUD3171PZ
TYPICAL CHARACTERISTICS
18
16
C, CAPACITANCE (pF)
14
t, TIME (ns)
12
10
8
6
4
2
0
0
C
rss
2
4
6
8
10
12
14
16
18
20
1
1
C
oss
V
GS
= 0 V
T
J
= 25°C
100
C
iss
t
d(off)
t
f
t
r
t
d(on)
10
V
DD
= 10 V
I
D
= 200 mA
V
GS
= 4.5 V
10
R
G
, GATE RESISTANCE (W)
100
1000
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
0.18
0.16
I
S
, SOURCE CURRENT (A)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
0.2
0.4
0.6
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
V
GS
= 0 V
T
J
= 25°C
0.8
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
NTUD3171PZ
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE D
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
H
E
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.05
0.10
0.15
0.95
1.00
1.05
MIN
0.004
0.003
0.037
0.03
INCHES
NOM
MAX
D
A
B
4
E
3
C
0.08 C A
B
A
6
5
1 2
e
H
E
6X
b
0.006 0.008
0.005 0.007
0.039 0.041
0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.008
0.20
0.008
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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