JANTX1N3828AUR-1 datasheet, PDF

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JANTX1N3828AUR-1: DescriptionZener Diode, 6.2V V(Z), 5%, 1W,; CategoryDiscrete semiconductor diode; File Size204KB，21 Pages; ManufacturerAeroflex Metelics / Hi-Rel Components

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Zener Diode, 6.2V V(Z), 5%, 1W,

JANTX1N3828AUR-1 Parametric

Parameter Name	Attribute value
Objectid	114096693
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode type	ZENER DIODE
Maximum dynamic impedance	2 Ω
Number of components	1
Maximum operating temperature	175 °C
Maximum power dissipation	1 W
Nominal reference voltage	6.2 V
surface mount	YES
Maximum voltage tolerance	5%
Working test current	41 mA

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 11 August 2009.

INCH-POUND

MIL-PRF-19500/115N

11 May 2009

SUPERSEDING

MIL-PRF-19500/115M

w/ AMENDMENT 1

14 May 2008

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES

1N3821A THROUGH 1N3828A, 1N3016B THROUGH 1N3051B,

1N3821A-1 THROUGH 1N3828A-1, 1N3016B-1 THROUGH 1N3051B-1,

1N3821AUR-1 THROUGH 1N3828AUR-1, 1N3016BUR-1 THROUGH 1N3051BUR-1,

PLUS C- AND D- TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANHC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein

shall consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with

voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each

device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.

1.2 Physical dimensions. See figures 1 (DO-13), 2 (DO-41), 3 (DO-213AB), 4, and 5 (for JANHC).

1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.8 herein) and as follows:

-55C



Top



+175C; -55C



TSTG



+175C.

Type

DO-13, DO-41

DO-213AB

PTL

1.0 (1)

1.0 (2)

C

+95

TEC

C

+125

PTPCB

(1) L = .375 inch (9.53 mm). Both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate IZ to

0 at PTL = +175C).

(2) Derate to 0 at PTEC = +175C.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil

. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at

http://assist.daps.dla.mil

AMSC N/A

FSC 5961

MIL-PRF-19500/115N

1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary test ratings (see

3.9 herein) and as follows: 3.3 V dc

V

200

V dc. A and B suffix devices are 5 percent voltage tolerance. C suffix

devices are 2 percent voltage tolerance. D suffix devices are 1 percent voltage tolerance.

Type

JL

(1)

C/W

JEC

(2)

C/W

JA

(3)

C/W

DO-13

DO-41

DO-213AB

(1) L = .375 inch (9.53 mm).

(2) Junction to end-caps.

(3) See figures 6, 7, and 8 for derating curves. TA = +75C for both axial and MELF (US) on printed circuit

board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .067 inch

(1.70 mm) x .105 inch (2.67 mm); pads (axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 mm)

x 1 inch (25.4 mm) long, axial lead length L

187

inch (4.76 mm); R

JA

with a defined thermal resistance

condition included is measured at IZ = as defined in test ratings herein.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

(Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://assist.daps.dla.mil

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

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