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JANTXV1N3045BUR-1

Description
Zener Diode, 110V V(Z), 5%, 1W,
CategoryDiscrete semiconductor    diode   
File Size204KB,21 Pages
ManufacturerAeroflex Metelics / Hi-Rel Components
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Zener Diode, 110V V(Z), 5%, 1W,

JANTXV1N3045BUR-1 Parametric

Parameter NameAttribute value
Objectid114096633
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance450 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1 W
Nominal reference voltage110 V
surface mountYES
Maximum voltage tolerance5%
Working test current2.3 mA
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 11 August 2009.
INCH-POUND
MIL-PRF-19500/115N
11 May 2009
SUPERSEDING
MIL-PRF-19500/115M
w/ AMENDMENT 1
14 May 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
1N3821A THROUGH 1N3828A, 1N3016B THROUGH 1N3051B,
1N3821A-1 THROUGH 1N3828A-1, 1N3016B-1 THROUGH 1N3051B-1,
1N3821AUR-1 THROUGH 1N3828AUR-1, 1N3016BUR-1 THROUGH 1N3051BUR-1,
PLUS C- AND D- TOLERANCE SUFFIX, JAN, JANTX, JANTXV, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with
voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each
device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.
1.2 Physical dimensions. See figures 1 (DO-13), 2 (DO-41), 3 (DO-213AB), 4, and 5 (for JANHC).
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.8 herein) and as follows:
-55C
Top
+175C; -55C
TSTG
+175C.
Type
DO-13, DO-41
DO-213AB
PTL
W
1.0 (1)
1.0 (2)
TL
C
+95
TEC
C
+125
PTPCB
W
1
(1) L = .375 inch (9.53 mm). Both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate IZ to
0 at PTL = +175C).
(2) Derate to 0 at PTEC = +175C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
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