FDP047AN08A0
April 2002
FDP047AN08A0
N-Channel UltraFET
®
Trench MOSFET
75V, 80A, 4.7mΩ
Features
• r
DS(ON)
= 4.0mΩ (Typ.), V
GS
= 10V, I
D
= 80A
• Q
g
(tot) = 92nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
D
SOURCE
DRAIN
GATE
G
S
TO-220AB
FDP SERIES
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
< 144
o
C, V
GS
= 10V)
Continuous (T
C
= 25 C, V
GS
= 10V, with R
θJA
= 62 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
75
±20
80
15
Figure 4
600
310
2.0
-55 to 175
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
0.48
62
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDP047AN08A0 Rev. A
FDP047AN08A0
Package Marking and Ordering Information
Device Marking
FDP047AN08A0
Device
FDP047AN08A0
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 60V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150 C
o
75
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 80A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 37A, V
GS
= 6V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
-
4
V
Ω
0.0040 0.0047
0.0058 0.0087
0.0082
0.011
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 80A
I
g
= 1.0mA
-
-
-
-
-
-
-
6600
1000
240
92
11
27
16
21
-
-
-
138
17
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 40V, I
D
= 80A
V
GS
= 10V, R
GS
= 3.3Ω
-
-
-
-
-
-
-
18
88
40
45
-
160
-
-
-
-
128
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
53
54
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 0.48mH, I
AS
= 50A.
2:
Pulse Width = 100s
©2002 Fairchild Semiconductor Corporation
FDP047AN08A0 Rev. A
FDP047AN08A0
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
200
CURRENT LIMITED
BY PACKAGE
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
175
160
POWER DISSIPATION MULTIPLIER
1.0
0.8
120
0.6
80
0.4
0.2
40
0
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
(
o
C)
150
175
T
C
, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t , RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I = I
25
175 - T
C
150
1000
I
DM
, PEAK CURRENT (A)
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDP047AN08A0 Rev. A
FDP047AN08A0
Typical Characteristics
T
C
= 25°C unless otherwise noted
2000
1000
10µs
I
AS
, AVALANCHE CURRENT (A)
100µs
I
D
, DRAIN CURRENT (A)
100
500
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
STARTING T
J
= 25
o
C
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
10
DC
1
STARTING T
J
= 150
o
C
0.1
0.1
1
.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
120
V
GS
= 6V
90
V
GS
= 7V
120
I
D
, DRAIN CURRENT (A)
90
T
J
= 175
o
C
60
T
J
= 25
o
C
30
T
J
= -55 C
o
60
V
GS
= 5V
30
T
C
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
4.0
0
4.5
5.0
5.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6.0
0
0.5
1.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 7. Transfer Characteristics
7
DRAIN TO SOURCE ON RESISTANCE(mΩ)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
Figure 8. Saturation Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
V
GS
= 6V
6
5
1.5
V
GS
= 10V
4
1.0
V
GS
= 10V, I
D
= 80A
3
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
0.5
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDP047AN08A0 Rev. A
FDP047AN08A0
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.10
1.15
I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
1.05
0.8
1.00
0.6
0.95
0.4
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.90
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
10000
C
ISS
=
C
GS
+ C
GD
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 40V
8
6
1000
C
RSS
=
C
GD
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 80A
I
D
= 10A
0
25
50
Q
g
, GATE CHARGE (nC)
75
100
2
V
GS
= 0V, f = 1MHz
100
0.1
0
1
10
75
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2002 Fairchild Semiconductor Corporation
FDP047AN08A0 Rev. A
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