Standard SRAM, 2KX8, 150ns, MOS, CDIP24
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 101249030 |
| package instruction | DIP, DIP24,.6 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 150 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T24 |
| JESD-609 code | e0 |
| memory density | 16384 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of terminals | 24 |
| word count | 2048 words |
| character code | 2000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 2KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum slew rate | 0.08 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| SYC2129L-3 | SYD2129-3 | SYD2129L-3 | SYC2129-4 | SYC2129L-4 | SYD2129-4 | SYD2129L-4 | |
|---|---|---|---|---|---|---|---|
| Description | Standard SRAM, 2KX8, 150ns, MOS, CDIP24 | Standard SRAM, 2KX8, 150ns, MOS, CDIP24 | Standard SRAM, 2KX8, 150ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Objectid | 101249030 | 101249040 | 101249032 | 101249057 | 101249050 | 101249059 | 101249052 |
| package instruction | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 150 ns | 150 ns | 150 ns | 200 ns | 200 ns | 200 ns | 200 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of terminals | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| word count | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| character code | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum slew rate | 0.08 mA | 0.1 mA | 0.08 mA | 0.1 mA | 0.08 mA | 0.1 mA | 0.08 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| technology | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |