THYRISTOR MODULE
PK
(PD,PE,KK)
90F
UL:E76102 M）
（
Power Thyristor/Diode Module
PK90F
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
●
I
T(AV)
90A, I
T(RMS)
140A, I
TSM
2300A
25
12.5
12
K
1
G
1
K
2
G
2
200 A/μs
●
dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
K2
G2
3
2
M5X10
K2
G2
3
2
1
2.8
#110TAB
A1K2
（K2）
K1
（A2） G1
1
PK
K2
3
2
2
PE
K2
G2
K1
（A2） G1
1
31max
19.5
80±0.2
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
PD
KK
■Maximum
Ratings
Ratings
Symbol
Item
PK90F40
PD90F40
PE90F40
KK90F40
400
480
400
PK90F80
PD90F80
PE90F80
KK90F80
800
960
800
PK90F120
PD90F120
PE90F120
KK90F120
1200
1300
1200
PK90F160
PD90F160
PE90F160
KK90F160
1600
1700
1600
Ratings
90
140
2100
/
2300
22000
10
3
3
10
5
200
2500
−40
to
＋125
−40
to
＋125
2.7（28）
2.7（28）
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（
I
T RMS）
I
TSM
I
2
t
P
GM
（AV）
P
G
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
＊Average
On-State Current
＊R.M.S.
On-State Current
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
（M5）
Mounting
Torque
Terminal（M5）
Mass
6.5
29max
A1K2
（K2）
K1
（A2）
Unit：
A
3.5
●
di/dt
7.5 3.5
2- 6
20
20
92
20
17.5
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
℃
℃
N½½
（㎏f½B）
g
Conditions
Single phase, half wave, 180°
conduction, Tc：93℃
Single phase, half wave, 180°
conduction, Tc：93℃
1
cycle, 50Hz/60Hz, peak Value, non-repetitive
／
2
Value for one cycle of surge current
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
A.C.1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
■Electrical
Characteristics
Symbol
Item
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
＊Repetitive
Peak Reverse Current, max.
V
TM
＊Peak
On-State Voltage, max.
I
GT
／V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
dv／dt
I
H
Holding Current, typ.
I
L
Lutching Current, typ.
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 285A, Tj＝25℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝90A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
2
V
DRM
, Exponential wave.
Tj＝125℃, V
D
＝ ／
3
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
20
20
1.40
100
/
3
0.25
10
500
50
100
0.27
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
℃
/
W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Transient Thermal Impedance
θ
（℃/W）
j-c
;;
PK(PD,PE,KK)90F
２
１
Gate Characteristics
１
３
０
On-State Voltage max
Peak Forward Gate Voltage
（10V）
Gate Voltage
（V）
５
２
Av
er
ag
e
Peak Gate Current
（3A）
Ga
te
）
On-State Current
（A）
１
０
Pe
Po ak G
we a
（ te
r
10
W
Po
we
（
r
５
２
3W
）
１
2
０
１
０
０
５
２
５
２
125℃
25℃
−30℃
Maximum Gate Voltage that will not trigger any unit
（0.25V）
１
１
０
１
−１ １
０
１
０
２
５
１
２
０
２
５
１
３
０
２
５
５
０
１
２
３
4
５
Gate Current
（mA）
On-State Voltage
（V）
Per one element
Allowable Case Temperature
（℃）
２０
０
Average On-State Current Vs Power Dissipation
（Single phase half wave）
D.C.
１０
３
１０
２
１０
１
１０
０
９
０
８
０
７
０
６
０
Average On-State Current Vs Maximum Allowable
Case Temperature
（Single phase half wave）
Per one element
2
Power Dissipation
（W）
１０
５
360
。
: Conduction Angle
１０
０
θ
＝180゜
θ
＝120゜
θ
＝90゜
θ
＝60゜
θ
＝30゜
2
５
０
360
。
: Conduction Angle
θ
＝30゜θ
＝60゜ ＝90゜ ＝120゜θ
θ
θ
＝180゜
D.C.
０
０
２
０
４
０
６
０
８
０
１０
０
１０
２
１０
４
１０
６
５
０
０
２
０
４
０
６
０
８
０
１０
０
１０
２
１０
４
１０
６
Average On-State Current
（A）
Average On-State Current
（A）
３０
００
２０
５０
２０
００
１０
５０
１０
００
５０
０
Surge On-State Current Rating
（Non-Repetitive）
Per one element
Ｔ = ５ start
½２ ℃
０５
．
Transient Thermal Impedance
Per one element
Surge On-State Current
（A）
０４
．
０３
．
Junction to case
60Hz
０２
．
50Hz
０１
．
０
0
１
０
２
５
１
１
０
２
５
１
2
０
０
−３
１
０
１
−２
０
１
−１
０
Time
（cycles）
Time
t
sec）
（
１
０
０
１
１
０
１
２
０
１
３
０
１
４
０
８０
０
Total Power Dissipation
（W）
Conduction Angle 180゜
９
０
Id Ar.m.s.）
（
Id Aav.）
（
Id Aav.）
（
６０
０
W3
B6
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
W1
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Id Ar.m.s.）
（
B2
９
０
１０
０
１０
１
１０
２
１５
２
０
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
１０
０
４０
０
１０
１
９
０
１０
０
１０
１
１０
２
１５
２
０
２０
０
１０
２
４
０
８
０
１０
２
１５
２
０
１０
０
２０
０
０
４
０
８
０
１０
２
４
０
８
０
１０
２
Output Current
（A）
Ambient Temperature
（℃）
Ambient Temperature
（℃）
Ambient Temperature
（℃）
Allowable Case Temperature
（℃）
Output Current
W１ Bidirectional connection
；
B２ Two Pluse bridge connection
；
B ； pulse bridge connection
６ Six
Ｗ；
３ Three phase
bidiretional connection
RF/Wirelessly
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