J/SST108 Series
Vishay Siliconix
N–Channel JFETs
J108
J109
J110
PRODUCT SUMMARY
Part Number
J/SST108
J/SST109
J/SST110
SST108
SST109
SST110
V
GS(off)
(V)
–3 to –10
–2 to –6
–0.5 to –4
r
DS(on)
Max (W)
8
I
D(off)
Typ (pA)
20
20
20
t
ON
Typ (ns)
4
4
4
12
18
FEATURES
D
D
D
D
D
Low On-Resistance: J108 <8
W
Fast Switching—t
ON
: 4 ns
Low Leakage: 20 pA
Low Capacitance: 11 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST108 series is designed with high-performance
analog switching applications in mind. It features low
on-resistance, good off-isolation, and fast switching.
The SST108 series is comprised of surface-mount
devices featuring the lowest r
DS(on)
of any TO-236
(SOT-23) JFET device.
The TO-226AA (TO-92) plastic package provides a
low-cost option. Both the J and SST series are available
in tape-and-reel for automated assembly (see Packaging
Information).
For similar products packaged in
TO-206AC (TO-52), see the 2N5432/5433/5434 data
sheet.
TO-226AA
(TO-92)
TO-236
(SOT-23)
D
1
D
1
3
G
S
2
S
2
G
3
Top View
SST108 (I8)*
SST109 (I9)*
SST110 (I0)*
*Marking Code for TO-236
Top View
J108, J109, J110
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SST108 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST108
J/SST109
J/SST110
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
= 5 V, I
D
= 1
mA
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 10 V, I
D
= 10 mA
V
DS
= 5 V, V
GS
= –10 V
T
A
= 125_C
V
GS
= 0 V, V
DS
v
0.1 V
I
G
= 1 mA , V
DS
= 0 V
–32
–25
–3
80
–10
–25
–2
40
–3
–3
–6
–25
V
–0.5
10
–3
–4
mA
–0.01
–5
–0.01
0.02
1.0
nA
3
3
3
8
0.7
12
18
W
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Input
Noise Voltage
g
fs
V
DS
= 5 V, I
D
= 10 mA, f = 1 kHz
g
os
r
ds(on)
C
iss
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= 0 V
V
GS
= 0 V
f = 1 MHz
V
DS
= 0 V
V
GS
= –10 V
f = 1 MHz
SST
J Series
SST
J Series
60
60
11
11
3.5
15
15
15
nV⁄
√Hz
85
85
85
pF
0.6
8
17
mS
12
18
W
C
rss
e
n
V
DG
= 5 V, I
D
= 10 mA
f = 1 kHz
Switching
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 1.5 V, V
GS(H)
= 0 V
See Switching Diagram
3
1
4
18
NIP
ns
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
www.vishay.com
7-2
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
20
r
DS(on)
– Drain-Source On-Resistance (
Ω )
1000
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
16
800
r
DS(on)
– Drain-Source On-Resistance (
Ω )
50
I
DSS
On-Resistance vs. Drain Current
T
A
= 25_C
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
– Saturation Drain Current (mA)
40
V
GS(off)
= –2 V
30
12
r
DS
600
8
I
DSS
400
20
–4 V
10
–8 V
0
1
10
I
D
– Drain Current (mA)
100
4
200
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
On-Resistance vs. Temperature
40
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 10 mA
r
DS
changes X 0.7%/_C
32
– Drain Current (mA)
V
GS(off)
= –2 V
24
80
100
Output Characteristics
V
GS(off)
= –2 V
60
V
GS
= 0 V
–0.2 V
40
–0.4 V
20
–0.6 V
–0.8 V
16
–4 V
8
–8 V
0
–55
–35
–15
5
25
45
65
85
105
125
I
D
0
0
2
4
6
8
10
T
A
– Temperature (_C)
V
DS
– Drain-Source Voltage (V)
Turn-On Switching
5
t
r
approximately independent of I
D
V
DD
= 1.5 V, R
G
= 50
Ω
V
GS(L)
= –10 V
Switching Time (ns)
30
Turn-Off Switching
t
d(off)
independent
of device V
GS(off)
V
DD
= 1.5 V, V
GS(L)
= –10 V
24
t
f
18
V
GS
(
off)
= –2 V
4
Switchng Time (ns)
3
t
d(on)
@ I
D
= 10 mA
t
d(on)
@ I
D
= 25 mA
2
12
V
GS(off)
= –8 V
1
t
r
6
t
d(off)
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
0
5
10
15
20
25
I
D
– Drain Current (mA)
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
100
V
DS
= 0 V
f = 1 MHz
80
Capacitance (pF)
100
V
GS(off)
= –4 V
g
fs
– Forward Transconductance (mS)
Transconductance vs. Drain Current
60
T
A
= –55_C
10
25_C
125_C
40
C
iss
20
C
rss
V
DS
= 5 V
f = 1 kHz
1
0
0
–4
–8
–12
–16
–20
1
10
I
D
– Drain Current (mA)
100
V
GS
– Gate-Source Voltage (V)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
g
fs
and g
os
@ V
DS
= 5 V
V
GS
= 0 V, f = 1 kHz
160
40
50
100
Noise Voltage vs. Frequency
V
DS
= 5 V
g
os
– Output Conductance (µS)
g
fs
– Forward Transconductance (mS)
120
g
fs
30
en – Noise Voltage nV /
Hz
10
I
D
= 10 mA
80
g
os
20
40
10
40 mA
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
Gate Leakage Current
100 nA
T
A
= 125_C
10 nA
– Gate Leakage
100
Common Gate Input Admittance
g
ig
5 mA
I
D
=10 mA
10
1 nA
1 mA
I
GSS
@ 125_C
100 pA
T
A
= 25_C
10 pA
10 mA
1 mA
I
GSS
@ 25_C
1 pA
0
4
8
12
16
20
0.1
10
20
50
100
V
DG
– Drain-Gate Voltage (V)
f – Frequency (MHz)
5 mA
(mS)
1
I
G
b
ig
T
A
= 25_C
V
DG
= 20 V
I
D
= 20 mA
www.vishay.com
7-4
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common Gate Forward Admittance
100
–g
fg
10
Common Gate Reverse Admittance
T
A
= 25_C
V
DG
= 20 V
I
D
= 20 mA
10
(mS)
(mS)
1.0
–g
rg
–b
rg
b
fg
1
T
A
= 25_C
V
DG
= 20 V
I
D
= 20 mA
0.1
10
20
f – Frequency (MHz)
50
100
0.1
0.01
10
20
50
100
f – Frequency (MHz)
Common Gate Output Admittance
100
T
A
= 25_C
V
DG
= 20 V
I
D
= 20 mA
10
b
og
(mS)
g
og
1
0.1
10
20
f – Frequency (MHz)
50
100
SWITCHING TIME TEST CIRCUIT
J/SST108
V
GS(L
)
R
L
*
I
D(on)
*Non-inductive
–12 V
150
W
10 mA
V
DD
J/SST
1
09
–7 V
150
W
10 mA
J/SST110
–5 V
150
W
10 mA
V
GS(H)
V
GS(L)
R
L
OUT
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
V
IN
Scope
1 kΩ
51
Ω
51
Ω
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
Embedded System
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