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SST39V800A-55-4I-C1QE

Description
IC,EEPROM,NOR FLASH,512KX16,CMOS,BGA,48PIN,PLASTIC
Categorystorage   
File Size4MB,37 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

SST39V800A-55-4I-C1QE Overview

IC,EEPROM,NOR FLASH,512KX16,CMOS,BGA,48PIN,PLASTIC

SST39V800A-55-4I-C1QE Parametric

Parameter NameAttribute value
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
terminal coatingMATTE TIN
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
A Microchip Technology Company
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K
x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with
SST proprietary, high-performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better reliability and manufac-
turability compared with alternate approaches. The SST39LF200A/400A/800A
write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/
800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con-
form to JEDEC standard pinouts for x16 memories.
Features:
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF200A/400A/800A
– 2.7-3.6V for SST39VF200A/400A/800A
• Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF200A
4 seconds (typical) for SST39LF/VF400A
8 seconds (typical) for SST39LF/VF800A
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• Sector-Erase Capability
– Uniform 2 KWord sectors
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Block-Erase Capability
– Uniform 32 KWord blocks
• Fast Read Access Time
– 55 ns for SST39LF200A/400A/800A
– 70 ns for SST39VF200A/400A/800A
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm)
– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
• Latched Address and Data
• All non-Pb (lead-free) devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
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