a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.
Document Number: 71087
S-50281—Rev. E, 21-Feb-05
www.vishay.com
Symbol
R
thJA
R
thJC
Typical
60
3.3
Maximum
70
4.0
Unit
_C/W
1
SUD15N06-90L
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
b
I
DSS
I
D(on)
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
Drain-Source On-State
Drain Source On State Resistance
b
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 10 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 10 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 5 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 10 A
0.065
11
15
0.050
0.065
0.12
0.15
0.090
S
W
60
1.0
2.0
3.0
"100
1
50
150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 2
W
I
D
^
15 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 15 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
524
98
28
12
2
3.5
7
8
15
7
20
25
40
20
ns
20
nC
pF
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 15 A, V
GS
= 0 V
I
F
= 15 A, di/dt = 100 A/ms
0.9
29
30
1.2
60
A
V
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
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