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SUD50P04-09L_08

Description
P-Channel 40-V (D-S), 175 °C MOSFET
File Size102KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SUD50P04-09L_08 Overview

P-Channel 40-V (D-S), 175 °C MOSFET

New Product
SUD50P04-09L
Vishay Siliconix
P-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 40
r
DS(on)
(Ω)
0.0094 at V
GS
= - 10 V
0.0145 at V
GS
= - 4.5 V
I
D
(A)
d
- 50
- 50
FEATURES
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information:
SUD50P04-09L
SUD50P04-09L (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
- 40
± 20
- 50
d
- 50
d
- 100
- 50
125
136
c
3
b, c
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
Notes:
a. Duty cycle
1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72243
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1
t
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.82
Maximum
18
50
1.1
°C/W
Unit

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