SUU50N03-12P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
D
TrenchFETr Power MOSFET
I
D
(A)
a
17.5
14.5
r
DS(on)
(Ω)
0.012 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
TO-251
D
G
and DRAIN-TAB
G D S
Top View
Order Number:
SUU50N03-12P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
01
T
C
= 25_C
T
A
= 25_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
I
S
I
AS
E
AS
Symbol
V
DS
V
GS
Limit
30
20
17.5
12.4
40
5
30
45
46.8
6.5
a
--55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
≤
10 sec.
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
www.vishay.com
t
≤
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
2.6
Maximum
23
50
3.2
Unit
_C/W
C/
1
SUU50N03-12P
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain Source On-State
Drain-Source On State
Forward
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 15 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
15
0.0138
40
0.010
0.012
0.017
0.0175
S
Ω
30
1.0
3.0
100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 2.5
Ω
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
5 ,
0 ,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1600
285
140
1.5
28
6.0
5.0
9
15
20
12
15
25
30
20
ns
42
nC
C
Ω
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 40 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
25
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300
ms,
duty cycle
≤
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
80
80
Transfer Characteristics
V
GS
= 10 thru 5 V
60
I D -- Drain Current (A)
I D -- Drain Current (A)
60
40
4V
40
T
C
= 125_C
20
25_C
20
3V
0
0
1
2
3
4
5
0
0
1
2
3
--55_C
4
5
6
V
DS
-- Drain-to-Source Voltage (V)
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V
GS
-- Gate-to-Source Voltage (V)
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
2
SUU50N03-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
80
T
C
= --55_C
r DS(on)-- On-Resistance (
Ω
)
g fs -- Transconductance (S)
0.04
0.05
On-Resistance vs. Drain Current
60
25_C
125_C
40
0.03
0.02
V
GS
= 4.5 V
V
GS
= 10 V
20
0.01
0
0
10
20
30
40
50
0.00
0
20
40
I
D
-- Drain Current (A)
60
80
I
D
-- Drain Current (A)
Capacitance
2500
10
Gate Charge
2000
C -- Capacitance (pF)
C
iss
1500
V GS -- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 50 A
6
1000
4
500
C
rss
0
0
5
10
15
C
oss
2
0
20
25
30
0
6
12
18
24
30
V
DS
-- Drain-to-Source Voltage (V)
Q
g
-- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8
V
GS
= 10 V
I
D
= 15 A
I S -- Source Current (A)
100
Source-Drain Diode Forward Voltage
1.6
r DS(on)-- On-Resistance (
Ω
)
(Normalized)
1.4
T
J
= 150_C
10
T
J
= 25_C
1.2
1.0
0.8
0.6
--50
1
--25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
-- Junction Temperature (_C)
V
SD
-- Source-to-Drain Voltage (V)
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
www.vishay.com
3
SUU50N03-12P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
20
1000
Safe Operating Area
16
I D -- Drain Current (A)
I D -- Drain Current (A)
100
Limited
by r
DS(on)
10, 100
ms
12
10
1 ms
10 ms
8
1
100 ms
1s
4
0.1
T
A
= 25_C
Single Pulse
10 s
dc, 100 s
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
T
A
-- Ambient Temperature (_C)
V
DS
-- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
Square Wave Pulse Duration (sec)
1
10
100
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4
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
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