SG-8002DC125.0000M-PTBB:ROHS datasheet, PDF

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SG-8002DC125.0000M-PTBB:ROHS: DescriptionOscillator, 1MHz Min, 125MHz Max, 125MHz Nom; CategoryPassive components oscillator; File Size526KB，5 Pages; ManufacturerSeiko Epson Corporation; Environmental Compliance

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SG-8002DC125.0000M-PTBB:ROHS Overview

Oscillator, 1MHz Min, 125MHz Max, 125MHz Nom

SG-8002DC125.0000M-PTBB:ROHS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	113287271
Reach Compliance Code	not_compliant
Installation features	SURFACE MOUNT
Number of terminals	4
Maximum operating frequency	125 MHz
Minimum operating frequency	1 MHz
Nominal operating frequency	125 MHz
Maximum operating temperature	70 °C
Minimum operating temperature	-20 °C
Maximum output low current	16 mA
Package body material	PLASTIC/EPOXY
Encapsulate equivalent code	SMDIP4/8,.3
power supply	5 V
Certification status	Not Qualified
Maximum slew rate	45 mA
Nominal supply voltage	5 V
surface mount	YES

SG-8002DC125.0000M-PTBB:ROHS Preview

Crystal oscillator

Epson Toyocom

Product Number (please contact us)

CRYSTAL OSCILLATOR

PROGRAMMABLE

CE, LB, CA

SG - 8002

series

Frequency

range

Supply

voltage

Function

1 MHz to 125 MHz

3.0 V / 3.3 V / 5.0 V

Output enable(OE) or Standby(

)

Short

mass production lead time by PLL technology.

SG-Writer

available to purchase,

please contact Epson Toyocom or local sales representative.

Specifications (characteristics)

Item

Symbol

Specifications

1 MHz to 125 MHz

1 MHz to 80 MHz

Conditions / Remarks

Output frequency range

Supply voltage

Storage temperature

Operating temperature

Frequency tolerance

T_stg

T_use

f_tol

Current consumption

4.5 V to 5.5 V

-55

C

to +125 °C

(SG-8002CA / JF / JA / DC / DB)

-55

C

to +100 °C

(SG-8002JC)

-40

C

to +125 °C

(SG-8002CE / LB)

-20

C

to +70 °C / -40

C

to +85 °C

50 

-6

, C:

100 

-6

100 

L:50 × 10

-6

L:50 × 10

-6

40 mA Max.

(SG-8002CE)

30 mA Max.

28 mA Max.

(SG-8002LB)

45 mA Max.

(SG-8002CA / JF /JC / JA / DC / DB)

Vcc = 4.5 V to 5.5 V (except SG-8002LB)

Vcc = 4.5 V to 5.5 V (SG-8002LB only)

1 MHz to 125 MHz V

= 3.0 V to 3.6 V

1 MHz to 66.7 MHz V

= 2.7 V to 3.6 V

2.7 V to 3.6 V

Store as bare product.

-20

C

to +70

C

-40

C

to +85

C

(except SG-8002JC) *3

-40

C

to +85

C

(SG-8002LB only) *3

No load condition, Max. frequency

Output disable current

Stand-by current

I_dis

I_std

30 mA Max.

25 mA Max.

50 µA Max.

16 mA Max.

OE=GND (PT.PH,PC) (except SG-8002LB)

OE=GND (PH,PC) (SG-8002LB only)

=GND (ST,SH,SC)

40 % to 60 %

TTL load: 1.4 V, Max. load condition

(except SG-8002LB)

40 % to 60 %

Symmetry

SYM

40 % to 60 %

CMOS load:50 % VCC level, Max. load condition

(except SG-8002LB)

50 % V

, L_CMOS=15 pF,

80

MHz (SG-8002LB)

50 % V

, L_CMOS=15 pF, V

=3.0 V to 3.6 V,

125

MHz

(SG-8002LB)

50 % V

, L_CMOS=15 pF, V

=2.7 V to 3.6 V,

66.7

MHz

(SG-8002LB)

High output voltage

Low output voltage

Output load condition

(TTL) *1

5 TTL Max.

L_TTL

5 TTL Max.

45 % to 55 %

-0.4 V Min.

0.4 V Max.

15 pF Max.

Output load condition

(CMOS) *1

L_CMOS

15 pF Max.

25 pF Max

15 pF Max.

70 % VCC Min.

20 % VCC Max.

15 pF Max.

Output enable /

disable input voltage

Rise / Fall time

Start-up time

Frequency aging

tr/ tf

t_str

f_aging

=-16 mA (PT,ST,PH,SH ) , -8 mA (PC,SC)

=16 mA (PT,ST,PH,SH) , 8 mA (PC,SC)

Max. frequency and Max. Supply voltage

(SG-8002CE / CA / JA / DC / DB)



90 MHz and Max. Supply voltage

(SG-8002JF / JC )

Max. frequency and Max. Supply voltage

(SG-8002CE / JF / JC)

Max. frequency and Max. Supply voltage

(SG-8002LB)

Max. frequency and Max. Supply voltage

(SG-8002CA / JA / DC / DB)

OE terminal or

terminal

TTL load: 0.4 V to 2.4 V level (except SG-8002LB)

CMOS load: 20 % VCC to 80 % VCC level

Time at minimum supply voltage to be 0 s

+25

C,

VCC=5.0 V/ 3.3 V (PC,SC) First year

2.0 V Min.

0.8 V Max.

4 ns Max.

3 ns Max.

10 ms Max.

±5 × 10

-6

/ year Max.

Operating temperature, the available frequency, symmetry, output load conditions and rise/fall time, please refer to “Outline specifications” page.

PLL-PLL connection & Jitter specification, please refer to “Jitter specifications and characteristics chart” page.

Refer to “Outline specifications” (Frequency range) for “M” and ”L” tolerance availability. Checking possible by the Frequency checking program.

http://www.epsontoyocom.co.jp

Crystal oscillator

External dimensions and Recommended footprint

SG-8002CE

3.20.2

Epson Toyocom

(Unit:mm)

Ceramic SON 4pin 3.2x2.5x1.05 mm

C (ex.0.01 µF)

2.2

1.4

2.50.2

SC181A

0.7 0.9

E125.0C

0.9

1.050.15

1.9

2.4

Resist

SG-8002LB

5.0

0.2

SOJ 4pin 5.0x3.2x1.2 mm

3.2

0.2

Metal may be exposed on the

top or bottom of this product.

This will not affect any quality,

reliability or electrical spec.

1.6

2.8

E 125.0B

FCC21A

1.2 Max.

0.1

2.54

1.0

2.54

0min.

(0.35)

2.5

(0.35)

SG-8002CA

Ceramic SON 4pin 7.0x5.0x1.4 mm

5.0

±0.2

1.4

2.2

1.8

(ex. 0.01 μF)

2.6

E 125.000

PHC935C

7.0

±0.2

2.0

5.08

Resist

5.08

SG-8002JF

7.1±0.2

SOJ 4pin 7.1x5.1x1.5 mm

(ex. 0.01 μF)

1.8

1.4

-0.15

+0.1

4.6±0.2

5.1±0.2

2PH 9245A

2.0

E 125.00C

Metal may be exposed on the top

or bottom of this product. This will

not affect any quality, reliability or

electrical spec.

1.5 Max.

Resist

5.08

(0.75)

3.8

(0.75)

0.4

5.08

0 Min.

Note.

OE Pin (PT, PH, PC)

OE Pin = "H" or "open": Specified frequency output.

OE Pin = "L": Output is high impedance.

Pin (ST, SH, SC)

Pin = "H" or "open": Specified frequency output.

Pin = "L": Output is low level (weak pull - down), oscillation

stops.

Pin map

Pin Connection

OE or

GND

OUT

VCC

To maintain stable operation, provide a

0.01uF to 0.1uF by-pass capacitor at a loca-

tion as near as possible to the power source

terminal of the crystal product (between Vcc -

GND).

http://www.epsontoyocom.co.jp

4.2

1.5

1.2

Crystal oscillator

External dimensions and Recommended footprint (Continued)

SG-8002JC

10.5 Max.

Epson Toyocom

(Unit:mm)

SOJ 4pin 10.5x5.8x2.7 mm

Package and pin compatible with SG-636.

1.3

E125.0000 C

2PH 9357B

5.0

5.8 Max.

Metal may be exposed on the top

or bottom of this product. This will

not affect any quality, reliability or

electrical spec.

4.6

2.7 Max.

0.51

5.08

0.05Min.

(1.0)

3.6

(1.0)

5.08

SG-8002JA

14.0 Max.

SOJ 4pin 14.0x9.8x4.7 mm

Package and pin compatible with SG-615.

1.3

9.8 Max.

8.65

EPSON

100.0000 C

2PH 9357B

4.7 Max.

0.25

8.8

5.08

0.51

5.08

7.62

0.25Min.

SG-8002DC

DIP half size

SG-8002DB

#14

DIP full size

EPSON

100.0000 C

2PH 9357B

EPSON 9357B

13.7 Max.

19.8 Max.

6.36

6.6

16.0000 C 2PH

2.54 Min. 5.3 Max.

3.0

2.1

2.54 Min. 5.3 Max.

7.62

0.51

7.62

0.2Min.

0.25

90~105

0.51

15.24

0.2 Min.

0.25

90~105

Note.

OE Pin (PT, PH, PC)

OE Pin = "H" or "open": Specified frequency output.

OE Pin = "L": Output is high impedance.

Pin (ST, SH, SC)

Pin = "H" or "open": Specified frequency output.

Pin = "L": Output is low level (weak pull - down), oscillation

stops.

Pin map

Pin Connection

OE or

GND

OUT

VCC

Pin map: SG-8002DC

Connection

OE or

GND

OUT

VCC

Pin map: SG-8002DB

Connection

OE or

GND

OUT

VCC

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor

at a location as near as possible to the power source terminal of the crys-

tal product (between Vcc - GND).

Products number

(Please contact us for each product.)

SG-8002CE:

SG-8002LB:

SG-8002CA:

SG-8002JF:

Q3321CExxxxxx00

Q3323LBxxxxxx00

Q3309CAx0xxxx00

Q3308JFx1xxxx00

SG-8002JC:

SG-8002JA:

SG-8002DC:

SG-8002DB:

Q3307JCx1xxxx00

Q3306JAx1xxxx00

Q3204DCx1xxxx00

Q3203DBx1xxxx00

http://www.epsontoyocom.co.jp

Crystal oscillator

Epson Toyocom

SG-8002 Series

Model

Supply

vol-

tage

Outline of specifications

Output load

condition

5TTL+15pF

15 pF

25 pF

15 pF

25pF

15 pF

(f0≤125 MHz)

(f0≤100 MHz)

(f0≤27 MHz)

40 % to 60 %

45 % to 55 %

40 % to 60 %

45 % to 55 %

40 % to 60 %

45 % to 55 %

40 % to 60 %

Operating

temperature

-20 °C to +70 °C

Symmetry

(1.4 V, L_TTL=5 TTL+15 pF, f0≤125 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤66.7 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤27.0 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤27.0 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤40 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤80 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤50 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤40 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤66.7 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤90 MHz)

(1.4 V, L_CMOS=15 pF, f0≤125 MHz)

(1.4 V, L_CMOS=25 pF, f0≤66.7 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤66.7 MHz)

(1.4 V, L_CMOS=15 pF, f0≤40 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤90.0 MHz)

(50 % VCC, L_CMOS=50 pF, f0≤50.0 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤40 MHz)

(50 % VCC, CL=15 pF, f0≤125 MHz)

(50 % VCC, CL=30 pF, f0≤40 MHz)

(50 % VCC, CL=15 pF, f0≤66.7 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤125 MHz)

(1.4 V, L_CMOS=25 pF, f0≤66.7 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤66.7 MHz)

(1.4 V, L_CMOS=15 pF, f0≤55.0 MHz)

(1.4 V, L_TTL=5 TTL+15 pF, f0≤40.0 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=50 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤55.0 MHz)

(50 % VCC, L_MOS=25 pF, f0≤40.0 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=30 pF, f0≤40 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤66.7 MHz)

(1.4 V,L_CMOS=15 pF, f0≤125 MHz)

(1.4 V,L_TTL=5 TTL+15 pF, f0≤90.0 MHz)

(1.4 V,L_CMOS=25 pF, f0≤66.7 MHz)

(1.4 V,L_TTL=5 TTL+15 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤90 MHz)

(50 % VCC, L_CMOS=50 pF, f0≤50 MHz)

(50 % VCC, L_CMOS=25 pF, f0≤66.7 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤125 MHz)

(50 % VCC, L_CMOS=30 pF, f0≤40 MHz)

(50 % VCC, L_CMOS=15 pF, f0≤66.7 MHz)

Output rise time /

Output fall time

2.0 ns Max. (0.8 V to 2.0 V,L_TTL=Max.)

4.0 ns Max. (0.4 V to 2.4 V,L_TTL=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

PT/ST

SG-8002CE

PH/SH

4.5 V to -40 °C to +85 °C

5.5 V

-20 °C to +70 °C

-40 °C to +85 °C

SG-8002LB

3.0 V

3.6 V

PC/SC

2.7 V

3.6 V

4.5 V

PH/SH 5.5 V

3.0 V

3.6 V

PC/SC 2.7 V

3.6 V

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

-40 °C to +85 °C

(f0≤50 MHz)

40 % to 60 %

45 % to 55 %

40 % to 60 %

45 % to 55 %

40 % to 60 %

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

PT/ST

-20 °C to +70 °C

4.5 V to -40 °C to +85 °C

5.5 V

SG-8002JF

PH/SH

-20 °C to +70 °C

-40 °C to +85 °C

3.0 V to

3.6 V

-40 °C to +85 °C

PC/SC

2.7 V to

3.6 V

-20 °C to +70 °C

PT/ST

SG-8002CA

SG-8002JA

SG-8002DB

PH/SH

SG-8002DC

-40 °C to +85 °C

3.0 V to

3.6 V

PC/SC 2.7 V to -40 °C to +85 °C

3.6 V

PT/ST

4.5 V to

-20 °C to +70 °C

5.5 V

SG-8002JC

PH/SH

3.0 V to

3.6 V

PC/SC

-20 °C to +70 °C

2.7 V to

3.6 V

4.5 V to

5.5 V

-40 °C to +85 °C

-20 °C to +70 °C

40 % to 60 %

5TTL+15 pF (f0≤ 90 MHz)

↑

15 pF (f0≤125 MHz)

↑

25 pF (f0≤66.7 MHz)

45 % to 55 %

15 pF (f0≤40 MHz)

40 % to 60 %

15 pF (f0≤125 MHz)

↑

25 pF (f0≤90 MHz)

↑

50 pF (f0≤50 MHz)

45 % to 55 %

15 pF (f0≤40 MHz)

40 % to 60 %

15 pF

40 % to 60 %

30 pF (f0≤40 MHz)

45 % to 55 %

15 pF

40 % to 60 %

2.0 ns Max. (0.8 V to 2.0 V,L_CMOS≤25pF)

4.0 ns Max. (0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS≤25pF)

4.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS≤15pF)

4.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

40 % to 60 %

5TTL+15pF (f0≤125 MHz)

↑

25 pF (f0≤66.7 MHz)

45 % to 55 %

5 TTL+15 pF (f0≤40 MHz) 40 % to 60 %

15 pF (f0≤55 MHz)

45 % to 55 %

40 % to 60 %

25 pF (f0≤125 MHz)

↑

50 pF (f0≤66.7 MHz)

45 % to 55 %

15 pF (f0≤55 MHz)

40 % to 60 %

25 pF (f0≤40 MHz)

45 % to 55 %

15 pF

40 % to 60 %

30 pF (f0≤40 MHz)

45 % to 55 %

15 pF

40 % to 60 %

2.0 ns Max. (0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)

4.0 ns Max. (0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS≤25pF)

4.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS≤15pF)

4.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

40 % to 60 %

5TTL+15 pF (f0≤90 MHz)

↑

15 pF (f0≤125 MHz)

↑

25 pF (f0≤66.7 MHz)

45 % to 55 %

40 % to 60 %

15 pF (f0≤125 MHz)

↑

25 pF (f0≤90 MHz)

↑

50 pF (f0≤66.7 MHz)

45 % to 55 %

15 pF

40 % to 60 %

30 pF (f0≤40 MHz)

45 % to 55 %

15 pF

40 % to 60 %

2.0 ns Max. (0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)

4.0 ns Max. (0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS≤25pF)

4.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

3.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS≤15pF)

4.0 ns Max. (20 % VCC to 80 % VCC,L_CMOS=Max.)

►

TABLE OF FREQUENCY RANGE

Model

PT/ ST

PH/ SH

PC/SC

PH/ SH

SG-8002LB

PC/ SC

PT/ ST

PH/ SH

PC/ SC

SG-8002CA

SG-8002JA

SG-8002DB

SG-8002DC

SG-8002JC

Frequency tolerance:

PT/ ST

PH/ SH

PC/ SC

PT/ ST

PH/ SH

PC/ SC

Supply voltage

4.5 V to 5.5 V

3.0 V to 3.6 V

2.7 V to 3.6 V

4.5 V to 5.5 V

3.0 V to 3.6 V

2.7 V to 3.6 V

4.5 V to 5.5 V

3.0 V to 3.6 V

2.7 V to 3.6 V

4.5 V to 5.5 V

3.0 V to 3.6 V

2.7 V to 3.6 V

4.5 V to 5.5 V

Frequency

1.0 MHz to 125 MHz

1.0 MHz to 27 MHz

1.0 MHz to 125 MHz

1.0 MHz to 66.7 MHz

1.0 MHz to 80 MHz

1.0 MHz to 27 MHz

1.0 MHz to 125 MHz

1.0 MHz to 66.7 MHz

1.0 MHz to 125 MHz

1.0 MHz to 40 MHz

1.0 MHz to 125 MHz

1.0 MHz to 66.7 MHz

1.0 MHz to 125 MHz

1.0 MHz to 55 MHz

1.0 MHz to 125 MHz

1.0 MHz to 66.7 MHz

1.0 MHz to 125 MHz

Frequency tolerance

Operating Temperature

B,C

B,C,M

B,C

M,L

B,C,M,L

B,C

B,C,M

B,C

B,C,M

B,C

SG-8002CE

SG-8002JF

3.0 V to 3.6 V

1.0 MHz to 125 MHz

B,C

2.7 V to 3.6 V

1.0 MHz to 66.7 MHz

-6

B:±50×10 (-20 °C to +70 °C ), C:±100×10 (-20 °C to +70 °C ), M:±100×10 (-40 °C to +85 °C ), L:±50×10 (-40 °C to +85 °C )

http://www.epsontoyocom.co.jp

Crystal oscillator

Epson Toyocom

SG-8002 series

Jitter specifications and characteristics chart

■

PLL-PLL connection

Because we use a PLL technology, there are a few cases that the jitter value will increase when SG-8002 is connected to another

PLL-oscillator.

In our experience, we are unable to recommend these products for the applications such as telecom carrier use or analog video

clock use. Please be careful checking in advance for these application (Jitter specification is Max.250 ps/CL=15 pF)

Jitter Specifications

Model

Supply

Voltage

5.0 V

0.5

Jitter Item

Cycle to cycle

Peak to peak

Specifications

150 ps Max.

200 ps Max.

250 ps Max.

200 ps Max.

250 ps Max.

Remarks

33 MHz



125 MHz, L_CMOS=15 pF

1.0 MHz



< 33 MHz, L_CMOS=15 pF

33 MHz



125 MHz, L_CMOS=15 pF

1.0 MHz



< 33 MHz, L_CMOS=15 pF

1.0 MHz



125 MHz, L_CMOS=15 pF

1.0 MHz



125 MHz, L_CMOS=15 pF

3.3 V

0.3

Cycle to cycle

Peak to peak

■

Remarks on noise management for power supply line

We do not recommend inserting filters or other devices in the power supply line as the counter measure of EMI noise reduction.

This device insertion might cause high-frequency impedance high in the power supply line and it affects oscillator stable drive.

When this measure is required, please evaluate circuitry and device behavior in the circuit and verify that it will not affect oscillation.

Start up time (0 % V

to 90 % V

) of power source should be more than 150

s.

■

SG-8002 series Characteristics chart

Current consumption

=5.0V)

Symmetry 5.0 V CMOS Level

25 pF

3.0

Output Rise time (CMOS Level)

Symmetry (%)

50 pF

2.5

(mA)

Rise time (ns)

40 60 80 100 120 140

Frequency(MHz)

15 pF

3.0 V

3.3 V

3.6 V

2.7 V

4.5 V

5.0 V

5.5 V

2.0

1.5

40 60 80 100 120 140

Frequency(MHz)

1.0

10 15 20 25 30 35 40 45

50 55

Disable Current

=5.0V)

Symmetry 3.3 V CMOS Level

3.0

Load capacitance (pF)

Output Fall time (CMOS Level)

3.0 V

3.3 V

3.6 V

4.5 V

5.0 V

5.5 V

Symmetry (%)

30 pF

_dis

(mA)

40 60 80 100 120 140

Frequency(MHz)

Stand-by Current

15 pF

Fall Time (ns)

2.5

40 60 80 100 120 140

Frequency(MHz)

2.0

2.7 V

1.5

Symmetry 5.0V TTL Level

1.0

10 15 20 25 30 35 40 45

50 55

Load capacitance (pF)

Symmetry (%)

_std

(A)

25 pF

15 pF

2.0

Output Rise time (TTL Level)

4.5 V

5.0 V

5.5 V

2.5

3.0 3.5 4.0 4.5 5.0

(V)

5.5 6.0

Rise Time (ns)

1.5

1.0

40 60 80 100 120 140

Frequency(MHz)

2.0

Additional Value (mA)

Output load vs. Additional Current consumption

=5.0 V

25 pF

50 pF

15 pF

30 pF

Voltage coefficient [

vs I_dis,I_std ]

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

2.5

I_dis(Va)=Times(Va)×I_dis(5.0V)

I_std(Va)=Times(Va)×I_std(5.0V)

Load capacitance (pF)

Output Fall time (TTL Level)

Fall Time (ns)

Times

1.5

4.5 V

5.0 V

5.5 V

1.0

40 60 80 100 120 140

Frequency(MHz)

3.0

3.5

4.0

4.5

5.0

5.5

6.0

(V)

Load capacitance (pF)

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