IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1125526200 |
| package instruction | DIP, DIP24,.6 |
| Reach Compliance Code | compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 120 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T24 |
| memory density | 16384 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Humidity sensitivity level | 1 |
| Number of terminals | 24 |
| word count | 2048 words |
| character code | 2000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 2KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.0005 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.06 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| 5962-01-293-6609 | 5962-01-312-1996 | MB8416-20PF | MB8416-25-WZ | MB8416A-15M | MB8416-25-WCV | |
|---|---|---|---|---|---|---|
| Description | IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC | Standard SRAM, 2KX8, 200ns, CMOS, CDIP24, | Standard SRAM, 2KX8, 200ns, CMOS, PDSO24 | Standard SRAM, 2KX8, 250ns, CMOS, CDIP24 | Standard SRAM, 2KX8, 150ns, CMOS, PDIP24 | Standard SRAM, 2KX8, 250ns, CMOS, CQCC32 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | DIP, DIP24,.6 | DIP, DIP24,.6 | SOP, SOP24,.4 | DIP, DIP24,.6 | DIP, DIP24,.6 | QCCN, LCC32,.45X.55 |
| Reach Compliance Code | compliant | compliant | unknown | unknown | unknown | unknown |
| Maximum access time | 120 ns | 200 ns | 200 ns | 250 ns | 150 ns | 250 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-PDIP-T24 | R-XDIP-T24 | R-PDSO-G24 | R-XDIP-T24 | R-PDIP-T24 | R-XQCC-N32 |
| memory density | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of terminals | 24 | 24 | 24 | 24 | 24 | 32 |
| word count | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| character code | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 85 °C | 125 °C | 70 °C | 125 °C |
| Minimum operating temperature | - | -40 °C | -40 °C | -55 °C | - | -55 °C |
| organize | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | CERAMIC | PLASTIC/EPOXY | CERAMIC | PLASTIC/EPOXY | CERAMIC |
| encapsulated code | DIP | DIP | SOP | DIP | DIP | QCCN |
| Encapsulate equivalent code | DIP24,.6 | DIP24,.6 | SOP24,.4 | DIP24,.6 | DIP24,.6 | LCC32,.45X.55 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE | IN-LINE | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.0005 A | 0.000001 A | 0.00001 A | 0.0003 A | 0.0005 A | 0.0003 A |
| Minimum standby current | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| Maximum slew rate | 0.06 mA | 0.06 mA | 0.06 mA | 0.065 mA | 0.06 mA | 0.065 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | YES | NO | NO | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | OTHER | INDUSTRIAL | MILITARY | COMMERCIAL | MILITARY |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| Terminal pitch | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | QUAD |
| Objectid | 1125526200 | - | - | 101230583 | 1942151448 | 101232067 |
| ECCN code | 3A001.A.2.C | - | - | 3A001.A.2.C | EAR99 | 3A001.A.2.C |
| JESD-609 code | - | - | e0 | e0 | e0 | e0 |
| Terminal surface | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |