VISHAY
TLHB420.
Vishay Semiconductors
High Efficiency Blue LED,
∅
3 mm Tinted Non-Diffused Package
Description
This device has been redesigned in 1998 replacing
SiC by GaN technology to meet the increasing
demand for high efficiency blue LEDs.
It is housed in a 3 mm tinted non-diffused plastic
package.
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with uni-
form appearance.
19222
Features
•
•
•
•
•
•
•
•
GaN on SiC technology
Standard
∅
3 mm (T-1) package
Small mechanical tolerances
Medium viewing angle
Very high intensity
Luminous intensity categorized
ESD class 1
Lead-free device
e2
Pb
Pb-free
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Parts Table
Part
TLHB4200
TLHB4201
Color, Luminous Intensity
Blue, I
V
> 25 mcd
Blue, I
V
= (40 to 132) mcd
Angle of Half Intensity (±ϕ)
22 °
22 °
Technology
GaN on SiC
GaN on SiC
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
TLHB420.
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5 s, 2 mm from body
T
amb
≤
60 °C
t
p
≤
10
µs
T
amb
≤
60 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
20
0.1
100
100
- 40 to + 100
- 40 to + 100
260
400
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 83014
Rev. 1.4, 30-Aug-04
www.vishay.com
1
TLHB420.
Vishay Semiconductors
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
VISHAY
Blue
Parameter
Luminous intensity
1)
Test condition
I
F
= 20 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
µA
Part
TLHB4200
TLHB4201
Symbol
I
V
I
V
λ
d
λ
p
ϕ
V
F
V
R
Min
25
40
Typ.
50
Max
132
Unit
mcd
mcd
nm
nm
deg
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
1)
466
428
± 22
3.9
5
4.5
V
V
in one Packing Unit I
Vmin
/I
Vmax
≤
0.5
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
0
°
I
Vrel
- Relative Luminous Intensity
10
°
20
°
125
P - Power Dissipation ( mW )
V
30°
100
75
50
25
0
1.0
0.9
0.8
0.7
0.6
40°
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0
20
40
60
80
100
95 10041
95 10904
T
amb
- Ambient Temperature (
°C
)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
60
I
F
- Forward Current ( mA )
100
I
F
- Forward Current ( mA )
50
40
30
20
10
0
10
1
0
20
40
60
80
100
15846
0
1
2
3
4
5
6
7
8
15884
T
amb
- Ambient Temperature (
°C
)
V
F
- Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 4. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 83014
Rev. 1.4, 30-Aug-04
VISHAY
TLHB420.
Vishay Semiconductors
I
Vrel
- Relative Luminous Intensity
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-10
I
F
= 10 mA
0 10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°C
)
15847
Figure 5. Rel. Luminous Flux vs. Ambient Temperature
I
Vrel
- Relative Luminous Intensity
10
1
0.1
0.01
15848
1
10
I
F
- Forward Current ( mA )
100
Figure 6. Relative Luminous Flux vs. Forward Current
I
Vrel
- Relative Luminous Intensity (%)
120
I
F
= 10 mA
100
80
60
40
20
0
350
400
450
500
550
600
15849
λ
- Wavelenght ( nm )
Figure 7. Relative Intensity vs. Wavelength
Document Number 83014
Rev. 1.4, 30-Aug-04
www.vishay.com
3
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
TLHB420.
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83014
Rev. 1.4, 30-Aug-04
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5
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