Standard SRAM, 16KX4, 8ns, CMOS, CDIP28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 101201785 |
| package instruction | DIP, DIP28,.3 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 8 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Humidity sensitivity level | 3 |
| Number of terminals | 28 |
| word count | 16384 words |
| character code | 16000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 16KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.00025 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.21 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| L7C161DMB8 | L7C161CC45 | L7C161CC85 | L7C161DC45 | L7C161DC85 | L7C161CMB8 | |
|---|---|---|---|---|---|---|
| Description | Standard SRAM, 16KX4, 8ns, CMOS, CDIP28 | Standard SRAM, 16KX4, 45ns, CMOS, CDIP28 | Standard SRAM, 16KX4, 85ns, CMOS, CDIP28 | Standard SRAM, 16KX4, 45ns, CMOS, CDIP28 | Standard SRAM, 16KX4, 85ns, CMOS, CDIP28 | Standard SRAM, 16KX4, 8ns, CMOS, CDIP28 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 8 ns | 45 ns | 85 ns | 45 ns | 85 ns | 8 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 |
| Humidity sensitivity level | 3 | 3 | 3 | 3 | 3 | 3 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 |
| word count | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| character code | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 70 °C | 70 °C | 70 °C | 70 °C | 125 °C |
| organize | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.00025 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00025 A |
| Minimum standby current | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| Maximum slew rate | 0.21 mA | 0.07 mA | 0.045 mA | 0.07 mA | 0.045 mA | 0.21 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - |