TLMS310.
Vishay Semiconductors
SMD LED in P–LCC–2 Package
Color
Super red
Type
TLMS310.
Technology
GaAsP on GaP
Angle of Half Intensity
±ö
60°
Description
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the TLMS310. is the P–LCC–2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
Features
D
SMD LEDs with exceptional brightness
D
Luminous intensity categorized
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Compatible with infrared, vapor phase and wave
solder processes according to CECC
D
Available in 8 mm tape
D
Low profile package
D
Non-diffused lens: excellent for coupling to light
pipes and backlighting
D
Low power consumption
D
Luminous intensity ratio in one packaging unit
I
Vmax
/I
Vmin
x
2.0, optional
x
1.6
94 8553
Applications
D
Automotive:
backlighting in dashboards and switches
D
Telecommunication: indicator and backlighting in
telephone and fax
D
Indicator and backlight for audio and video
equipment
D
Indicator and backlight in office equipment
D
Flat backlight for LCDs, switches and symbols
D
General use
Document Number 83170
Rev. A2, 04–Jul–02
www.vishay.com
1 (6)
TLMS310.
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLMS310., , , ,
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
5s
mounted on PC board
(pad size > 16 mm
2
)
T
amb
60°C
t
p
10
µs
T
amb
60°C
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
6
30
0.5
100
100
–40 to +100
–40 to +100
260
400
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Super red (TLMS310.)
Parameter
Luminous intensity
1)
y
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Temperature coefficient of V
F
Temperature coefficient of
λ
d
1)
Test Conditions
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
µA
V
R
= 0, f = 1MHz
I
F
= 20 mA
I
F
= 10 mA
Type
TLMS3100
TLMS3101
Symbol
I
V
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
TC
VF
TC
λd
Min.
2.5
4
624
Typ.
7.5
Max.
12.5
636
Unit
mcd
nm
nm
deg
640
±60
2.0
6
7.0
–1.8
0.05
2.6
V
V
pF
mV/K
nm/K
in one Packing Unit I
V
Min./ I
V
Max.
x
1.6
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2 (6)
Document Number 83170
Rev. A1, 04–Jul–02
TLMS310.
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25_C, unless otherwise specified)
125
I
v rel
– Relative Luminous Intensity
P
V
– Power Dissipation ( mW )
0°
10
°
20
°
30°
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
75
50
25
0
0
20
40
60
80
100
95 10904
T
amb
– Ambient Temperature (
°C
)
95 10319
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs.
Angular Displacement
100.0
60
I
F
– Forward Current ( mA )
50
40
30
20
10
0
0
95 10905
I
F
– Forward Current ( mA )
20
40
60
80
100
10.0
1.0
0.1
0
16634
1
T
amb
– Ambient Temperature (
°C
)
2
3
4
V
F
– Forward Voltage ( V )
5
Figure 2. Forward Current vs. Ambient Temperature
10000
I
F
– Forward Current ( mA )
t
p
/T=0.005
1000
0.01
0.02
0.05
100
0.2
0.5
DC
10
0.1
I
Vrel
–Relative Luminous Intensity
100
T
amb
v60°C
Figure 5. Forward Current vs. Forward Voltage
2.0
1.6
1.2
0.8
0.4
0.0
1
0.01
95 9985
0.1
1
10
0
16635
20
40
60
80
100
t
p
– Pulse Length ( ms )
T
amb
– Ambient Temperature (
°C
)
Figure 3. Forward Current vs. Pulse Length
Figure 6. Rel. Luminous Intensity vs.
Ambient Temperature
Document Number 83170
Rev. A2, 04–Jul–02
www.vishay.com
3 (6)
TLMS310.
Vishay Semiconductors
n
V
F
– Change of Forward Voltage (mV)
200
100
50
0
–50
–100
–150
–200
–250
–300
0
16636
10.00
I
Vrel
–Relative Luminous Intensity
20
40
60
80
100
150
1.00
0.10
T
amb
– Ambient Temperature (
°C
)
0.01
1.00
16638
10.00
V
F
– Forward Current ( mA )
100.00
Figure 7. Change of Forward Voltage vs.
Ambient Temperature
n
l
d
– Change of Dom. Wavelength (nm)
5
4
3
2
1
0
–1
–2
–3
0
16637
Figure 9. Rel. Luminous Intensity vs.
Forward Current
1.2
I
Vrel
–Relative Luminous Intensity
1.0
0.8
0.6
0.4
0.2
0.0
550
16639
20
40
60
80
100
T
amb
– Ambient Temperature (
°C
)
590
630
670
710
750
l
– Wavelength ( nm )
Figure 8. Change of Dominant Wavelength vs.
Ambient Temperature
Figure 10. Rel. Luminous Intensity vs. Wavelength
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4 (6)
Document Number 83170
Rev. A1, 04–Jul–02
TLMS310.
Vishay Semiconductors
Dimensions in mm
95 11314
PCB Layout in mm
95 10966
Document Number 83170
Rev. A2, 04–Jul–02
www.vishay.com
5 (6)
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