VISHAY
TLMW310.
Vishay Semiconductors
High Intensity SMD LED
Description
This device has been designed to meet the increasing
demand for white SMD LED.
The package of the TLMW310. is the PLCC-2 (equiv-
alent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled with a mixture of epoxy and TAG phosphor.
The TAG phosphor converts the blue emission par-
tially to yellow, which mixes with the remaining blue to
give white.
19225
e3
Pb
Pb-free
Features
• High efficient InGaN technology
• Chromaticity Coordinate categorized according to
CIE1931 per packing unit
• Luminous intensity ratio in one packing unit
I
Vmax
/I
Vmin
≤
1.6
• Typical color temperature 5500 K
• ESD class 1
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape reel
• Lead-free device
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Backlighting for audio and video equipment
Backlighting in office equipment
Indoor and outdoor message boards
Flat backlight for LCDs, switches and symbols
Illumination purposes, alternative to incandescent
lamps
General use
Parts Table
Part
TLMW3100
TLMW3101
TLMW3102
Color, Luminous Intensity
White, I
V
> 80 mcd
White, I
V
= (80 to 200) mcd
White, I
V
= (125 to 320) mcd
Angle of Half Intensity (±ϕ)
60 °
60 °
60 °
Technology
InGaN / TAG on SiC
InGaN / TAG on SiC
InGaN / TAG on SiC
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
TLMW310.
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
T
amb
≤
70 °C
t
p
≤
10
µs
T
amb
≤
70 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
Value
5
20
0.1
85
100
- 40 to + 100
Unit
V
mA
A
mW
°C
°C
Document Number 83143
Rev. 1.7, 31-Aug-04
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1
TLMW310.
Vishay Semiconductors
Parameter
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
Test condition
Symbol
T
stg
T
sd
R
thJA
Value
- 40 to + 100
260
350
VISHAY
Unit
°C
°C
K/W
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
White
TLMW310.
Parameter
Luminous intensity
1)
Test condition
I
F
= 20 mA
Part
TLMW3100
TLMW3101
TLMW3102
Chromaticity coordinate x acc.
to CIE 1931
Chromaticity coordinate y acc.
to CIE 1931
Angle of half intensity
Forward voltage
Reverse voltage
Temperature coefficient of V
F
Temperature coefficient of I
V
1)
Symbol
I
V
I
V
I
V
x
y
ϕ
V
F
V
R
TC
VF
TC
IV
Min
80
80
125
Typ.
140
Max
200
320
Unit
mcd
mcd
mcd
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
R
= 10
µA
I
F
= 20 mA
I
F
= 20 mA
TLMW3100
TLMW3100
0.33
0.33
± 60
3.5
5
-4
- 0.5
4.2
deg
V
V
mV/K
%/K
in one Packing Unit I
Vmax
/I
Vmin
≤
1.6
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
90
P
V
- Power Dissipation ( mW )
I
F
- Forward Current ( mA )
25
20
15
10
5
0
16192
80
70
60
50
40
30
20
10
0
0 10 20
30 40 50 60 70 80 90 100
0 10 20
30 40 50 60 70 80 90 100
16191
T
amb
- Ambient Temperature (
°
C )
T
amb
- Ambient Temperature (
°
C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for AlInGaP
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Document Number 83143
Rev. 1.7, 31-Aug-04
VISHAY
TLMW310.
Vishay Semiconductors
30
I
F
- Forward Current ( mA )
25
20
15
10
5
0
0
II
I
V rel
- Relative Luminous Intensity
MTTF, confidence level 60%
failure criteria I
V
/I
V0
= 50%
I
ı
II
ı
5000h
10000h
100
90
80
70
60
50
40
30
20
10
0
400 450 500 550 600 650 700 750 800
16196
I
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°C
)
16193
λ
- Wavelength ( nm )
Figure 3. Forward Current vs. Ambient Temperature for AlInGaP
Figure 6. Relative Intensity vs. Wavelength
10
I
Vrel
- Relative Luminous Intensity
I
Vrel
- Relative Luminous Intensity
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 10 20
30 40 50 60 70 80 90 100
1
0.1
0.01
1
16194
10
I
F
- Forward Current ( mA )
100
16197
T
amb
- Ambient Temperature (
°
C )
Figure 4. Relative Luminous Intensity vs. Forward Current
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
100
f - Chromaticity coordinate shift (x,y)
0.345
White
0.340
0.335
0.330
Y
0.325
0.320
0.315
X
I
F
- Forward Current ( mA
)
10
1
2.0
16195
2.5
3.0
3.5
4.0
4.5
5.0
V
F
- Forward Voltage ( V )
16198
0
10
20
30
40
50
60
I
F
- Forward Current ( mA )
Figure 5. Forward Current vs. Forward Voltage
Figure 8. Chromaticity Coordinate Shift vs. Forward Current
Document Number 83143
Rev. 1.7, 31-Aug-04
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3
TLMW310.
Vishay Semiconductors
VISHAY
3.95
3.90
I
F
- Forward Voltage ( V )
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
0 10 20
30 40 50 60 70 80 90 100
16199
T
amb
- Ambient Temperature (
°
C )
Figure 9. Forward Voltage vs. Ambient Temperature
0°
I
V re l
- Relative Luminous Intensity
10°
20°
30°
1.0
0.9
0.8
0.7
0.6
40°
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
95 10319
Figure 10. Rel. Luminous Intensity vs. Angular Displacement
0.50
Coordinates of Colorgroups
0.45
D65
0.40
b
0.35
a
0.30
0.25
0.20
0.20
3
c
d
5
e
f
A
.
.
4
a=
b=
c=
d=
e=
f=
20000K
10000K
7000K
6000K
5000K
4000K
0.25
0.30
0.35
0.40
0.45
0.50
16284
Coordinates of Colorgroups
Figure 11. Coordinates of Colorgroups
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Document Number 83143
Rev. 1.7, 31-Aug-04
VISHAY
Package Dimensions in mm
TLMW310.
Vishay Semiconductors
3.5 ± 0.2
+ 0.10
1.65- 0.05
technical drawings
according to DIN
specifications
0.85
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4
1.6 (1.9)
∅
2.4
3
+ 0.15
Dimensions: IR and Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
Document Number 83143
Rev. 1.7, 31-Aug-04
4
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5
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